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Multi-cathode long service life ion source

A long-life, ion source technology, applied in the field of ion sources, can solve problems such as limited life of single cathode

Pending Publication Date: 2019-05-21
无锡诚承电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The problem with such indirectly heated cathode ion sources is the limited lifetime of the single cathode

Method used

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Examples

Experimental program
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Embodiment Construction

[0018] as attached figure 2 In an implementation example, the positions of the filaments 101-104 and the cathodes 201-204 are relatively fixed, and the filaments are non-contact embedded in the cathode groove to form a hot cathode combination; the hot cathode combination of the filament 101 and the cathode 201 and the filament 103 and the cathode 203 The combination of hot cathodes is axially symmetrical, that is, group A double cathodes; the hot cathode combination of filament 102 and cathode 202 and the hot cathode combination of filament 104 and cathode 204 are axially symmetrical, that is, group B double cathodes.

[0019] The cavity of the arc chamber 3 includes a lead-out plate 301, a side wall 302 and a bottom plate 303; the lead-out plate 301, the bottom plate 303 and the upper and lower sides of the side wall 302 are connected by embedding or pin guidance; one piece of side symmetrical opening or multiple pieces all or Partially perforated components. The arc chambe...

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Abstract

The invention provides a multi-cathode long service life ion source, adopting a way of heating cathodes indirectly. A hot cathode combination of axially symmetrical lamp filaments and cathodes is formed into a dual-cathode structure. The multiple dual-cathode structures can freely switch ion transmission ends and reflection ends, so that the service life of the ion source is improved, and the stability and efficiency of the ion implanter equipment are improved.

Description

technical field [0001] The invention relates to semiconductor device manufacturing equipment, in particular to an ion source of an ion implanter. Background technique [0002] The ion implanter is the key equipment in the manufacturing process of semiconductor devices. The ions to be implanted are obtained by ionization, focused into ion beams, accelerated by an electric field to obtain extremely high kinetic energy, and implanted into semiconductor wafers to achieve doping. [0003] A typical ion implanter includes an ion source, an ion extraction device, a mass analysis device, a beam delivery device, and a wafer processing device. The ion source is a device used to generate the required implanted ions. The life of the ion source determines the stability and efficiency of the ion implanter. It is the key device of the ion implanter. [0004] There are two types of ion sources used in ion implanters: Berners ion source and indirect heated cathode (IHC) ion source. [0005...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/317H01J37/08
Inventor 方明江蔡成振
Owner 无锡诚承电子科技有限公司