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Apparatus and method for planarizing substrate

A flattening and substrate technology, applied in grinding devices, electrical components, circuits, etc., can solve problems such as level difference elimination inhomogeneity, device performance impact, etc.

Pending Publication Date: 2019-05-21
EBARA CORP
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  • Claims
  • Application Information

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Problems solved by technology

These dips or erosions have a large impact on the deviation of the wiring cross-sectional area, and therefore, have a large impact on the device performance
[0005] The above is an example of the process of embedding Cu wiring by CMP, but in other planarization processes, there are also various differences in the previous film formation stage due to the pattern structure in the chip or the film formation method. The step difference in size, resulting in the non-uniformity of step difference elimination caused by the size difference

Method used

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  • Apparatus and method for planarizing substrate
  • Apparatus and method for planarizing substrate
  • Apparatus and method for planarizing substrate

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Embodiment Construction

[0087] below, with Figure 1 Embodiments of the planarization device and the planarization method for planarizing the surface of the substrate according to the present invention will be described in the same manner. In the drawings, the same or similar reference signs are attached to the same or similar elements, and in the description of each embodiment, overlapping descriptions of the same or similar elements may be omitted. In addition, each feature described in each embodiment can also be applied to other embodiments as long as they do not contradict each other.

[0088] figure 2 It is a top view showing the flattening device 10 of one embodiment. Such as figure 2As shown, the planarization device 10 has a loading / unloading unit 20 , a roughening treatment unit 100 , a grinding unit 200 , a cleaning unit 300 and a drying unit 400 . In addition, the flattening apparatus 10 has a loading / unloading unit 20 , a roughening unit 100 , a polishing unit 200 , a cleaning unit...

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Abstract

The invention provides an apparatus and a method for planarizing a substrate. An even step elimination performance is obtained even when steps of various dimensions exist which are caused due to pattern structures existing in a chip or film forming methods. A planarizing apparatus is provided which is configured to planarize a surface of a substrate, and this planarizing apparatus includes a surface roughening unit configured to roughen a target processing surface of the substrate by use of roughening particles and a CMP unit configured to polish chemically and mechanically (CMP) the roughenedtarget processing surface of the substrate.

Description

technical field [0001] The present invention relates to apparatus and methods for planarizing a substrate. Background technique [0002] In recent years, processing apparatuses have been used to perform various processes on objects to be processed (for example, substrates such as semiconductor wafers or various films formed on the surfaces of the substrates). As an example of the processing apparatus, a CMP (Chemical Mechanical Polishing: chemical mechanical polishing) apparatus for performing polishing processing of a processing target object, etc. is mentioned. Generally, in CMP, an object to be processed is pressed against a polishing pad, an abrasive (slurry) is supplied between the object to be processed and the polishing pad, and the object to be processed and the polishing pad are relatively moved. Grinding the surface of the object. [0003] It is known that the polishing rate of a CMP apparatus is based on Preston's law, and that the polishing rate is proportional...

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Application Information

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IPC IPC(8): H01L21/304H01L21/306H01L21/67
CPCH01L21/67219B24B37/04B24B57/02B24B37/32H01L21/3212H01L21/321H01L21/7684H01L21/67092H01L21/67051H01L21/67034H01L21/304H01L21/02052H01L21/02013H01L21/30625H01L21/67023H01L21/768
Inventor 马场枝里奈小畠严贵
Owner EBARA CORP
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