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System and method for measuring single event effect section in atmospheric neutrons under low-probability condition

A single-event effect and atmospheric neutron technology, applied in electronic circuit testing, non-contact circuit testing, etc., can solve the problem of long-time irradiation test, achieve good resistance to atmospheric neutron single-event effect, and shorten the test time. , the effect of reducing development costs

Active Publication Date: 2019-07-09
NORTHWEST INST OF NUCLEAR TECH
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Problems solved by technology

[0004] In order to solve the technical problem that the radiation test of the traditional measurement system takes a long time under low probability conditions, the present invention provides a measurement system and method for atmospheric neutron single event effect cross section under low probability conditions

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  • System and method for measuring single event effect section in atmospheric neutrons under low-probability condition
  • System and method for measuring single event effect section in atmospheric neutrons under low-probability condition
  • System and method for measuring single event effect section in atmospheric neutrons under low-probability condition

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Embodiment Construction

[0042] In order to make the purpose, content and advantages of the present invention clearer, the present invention will be further described below in conjunction with the accompanying drawings.

[0043] refer to figure 1 As shown, the atmospheric neutron single event effect cross-section measurement system under low probability conditions provided by the present invention includes a test board, an irradiation board (on which the SRAM memory 1 and the SRAM storage bar 2 to be tested are arranged) and a computer. The test board is connected to m (m≥1) irradiated boards and placed in an atmospheric neutron environment. The i (i=1,2,...,m) irradiated board is integrated with n i (n i ≥1) SRAM memory sticks, wherein, the jth (j=1,2,...,n i ) SRAM memory sticks are integrated with h j (h j≥1) SRAM memories, that is, each irradiated board can have one or more SRAM memory bars, and each SRAM memory bar is integrated with one or more SRAM memories. The types of SRAM memory integr...

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Abstract

The invention provides a system and method for measuring a single event effect section in atmospheric neutrons under a low-probability condition. The technical problem of long consumed time of an irradiation test of a traditional measuring system under the low-probability condition is solved. The measuring system comprises m irradiation plates, a test plate and a computer; m is greater than or equal to 1; n sockets used for being pluging-in mounting of SRAM strips to be tested are integrated on the i irradiation plate, i=1,2,...,m, and n is greater than or equal to 1; the test plateis connected with the m irradiation plates and used for monitoring the working state of the SRAM strips on the m irradiation plates, and sends single event effect data obtained by monitoring to the computer; the single event effect data comprises the overturning number of single events and the bolt lock number of the single events; and the computer is connected with the test plate, and used for obtaining and processing the test data sent by the test plate to obtain the single event effect section of tested SRAMs on the SRAM strips to be tested in an atmospheric neutron environment.

Description

technical field [0001] The invention relates to a system and method for measuring the cross-section of atmospheric neutron single-event effects under low-probability conditions. The low probability mentioned in the present invention is relative to the accelerator environment in the ground simulation test, because the atmospheric environment includes the adjacent space, and the flux of neutrons is several orders of magnitude smaller than that of the accelerator in the ground simulation test. Background technique [0002] Cosmic rays and solar flares, etc., interact directly or indirectly with the atmosphere to produce atmospheric neutrons, which have energies ranging from MeV to GeV. When atmospheric neutrons are incident on a semiconductor device, a large number of electron-hole pairs will be generated, and these electron-hole pairs can be collected by the sensitive reverse-biased PN junction in the semiconductor device, so that the logic state of the circuit is reversed and...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/302
CPCG01R31/302
Inventor 王勋郭晓强张凤祁陈伟丁李利罗尹虹
Owner NORTHWEST INST OF NUCLEAR TECH
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