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Method for manufacturing semiconductor structure

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problem of reducing contact plug resistance, reducing contact plug size, increasing semiconductor device process and manufacturing complexity degree, etc.

Inactive Publication Date: 2019-09-10
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, such miniaturization also increases the complexity of the semiconductor device process and manufacturing
As the dimensions of semiconductor devices shrink to sub-micron (sub-micron) dimensions in advanced technology nodes (nodes), reducing contact plug resistance while reducing contact plug size becomes increasingly challenging

Method used

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  • Method for manufacturing semiconductor structure
  • Method for manufacturing semiconductor structure
  • Method for manufacturing semiconductor structure

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Embodiment Construction

[0032] The following disclosure provides many different embodiments, or examples, for implementing different components of the presented subject matter. Specific examples of components and configurations are described below to simplify the present disclosure. Of course, these illustrations are only exemplary rather than limiting the present disclosure. For example, if it is mentioned in the description that the first component is formed on or over the second component, it may include the embodiment in which the first component is formed in direct contact with the second component, and it may also include that an additional component is formed on the second component. An embodiment in which the first part is not in direct contact with the second part between one part and the second part. In addition, this disclosure may use repeated reference numerals and / or letters in various examples. This repetition is for the purpose of simplicity and clarity and does not indicate the rela...

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PUM

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Abstract

A method of making a semiconductor device that includes forming a dielectric stack over a substrate and patterning a contact region in the dielectric stack, the contact region having side portions anda bottom portion that exposes the substrate. The method also includes forming a dielectric barrier layer in the contact region to cover the side portions and forming a conductive blocking layer to cover the dielectric barrier layer, the dielectric stack, and the bottom portion of the contact region. The method can include forming a conductive layer over the conductive blocking layer and forming aconductive barrier layer over the conductive layer. The method can further include forming a silicide region in the substrate beneath the conductive layer.

Description

technical field [0001] The present disclosure relates to a semiconductor technology, in particular to a semiconductor contact plug and its forming method. Background technique [0002] Semiconductor devices are widely used in various electronic devices such as smartphones, notebook computers, digital cameras, and others. In general, a typical semiconductor device includes a substrate with active devices such as transistors, capacitors, inductors, and other components. These active components are initially isolated from each other, and then interconnect structures are formed above the active devices to create functional circuits. Such interconnect structures may include lateral interconnects, such as metal lines (wirings), and vertical interconnects, such as conductive vias or contact plugs. [0003] Demand continues to increase for smaller and faster semiconductor devices, which can simultaneously support more and more increasingly complex and advanced functions. This min...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
CPCH01L21/76897H01L29/665H01L21/76831H01L21/76846H01L21/76855H01L23/485H01L21/28518H01L21/7684H01L21/76889H01L21/76883H01L23/5226H01L23/528H01L23/53266H01L23/53209H01L23/5329H01L21/0274H01L21/31116H01L21/3212H01L21/76802
Inventor 李雅惠朱立伟廖祐祥黄鸿仪张志维苏庆煌
Owner TAIWAN SEMICON MFG CO LTD