A kind of semiconductor device and its manufacturing method and electronic equipment including the device
A semiconductor and device technology, applied in the field of semiconductor devices and their fabrication, and electronic equipment, can solve problems such as difficulty in threshold control
Active Publication Date: 2022-07-12
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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[0004] The purpose of the present invention is at least partly to provide a semiconductor device and its manufacturing method and electronic equipment including the semiconductor to solve the problem of difficult threshold control
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[0034] The following disclosure provides many different embodiments or examples for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to limit the invention. For example, in the following description, forming a first part over or on a second part can include embodiments in which the first part and the second part are in direct contact, and can also include additional parts formed between the first part and the second part Embodiments such that the first part and the second part are not in direct contact.
[0035] In addition, for ease of description, spatial relational terms such as "below", "below", "lower", "above", "upper" and the like may be used herein to describe the The relationship of one element or component shown to another element or component. In addition to the orientation shown in the figures, spatiall...
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Abstract
The present invention provides a semiconductor device, a manufacturing method thereof, and an electronic device including the device. The semiconductor device includes: a substrate, where the substrate is a silicon substrate or an SOI substrate; SiGe fins are formed above the substrate, wherein , SiGe fins are Si containing different Ge contents along the horizontal direction x Ge 1‑x / Si y Ge 1‑y / Si z Ge 1‑z Sandwich structure, where x is 0.05~0.95, y is 0.1~0.9, and z is 0.05~0.95; shallow trench isolation region, disposed above the substrate and formed on the opposite side of the SiGe fin, the SiGe An end of the fin remote from the substrate protrudes beyond the shallow trench isolation region. The present invention proposes a kind of Si similar to sandwich structure with different Ge content x Ge 1‑x / Si y Ge 1‑y / Si z Ge 1‑z The device structure of Fin can change the band gap by adjusting the content of Ge, thereby adjusting the threshold value and improving the electrical properties such as mobility (effective mass change) and leakage. The invention can be applied to devices such as FinFETs or vertical nanowires.
Description
technical field [0001] The present invention relates to the field of semiconductors, and in particular, to a semiconductor device, a manufacturing method thereof, and an electronic device including the device. Background technique [0002] With the shrinking of device feature size, three-dimensional FinFET and nanowire devices with SiGe high-mobility channels have become a research hotspot. Among them, the threshold control of three-dimensional devices such as SiGe FinFET is an important challenge. This is because the height of Fin of conventional FinFET is about 50nm, the width of Fin is about 15nm, and the doping concentration of Vt adjustment is generally 5E17 to 3E18cm -3 The order of magnitude, the number of implanted impurities is about 20, and the fluctuation of the process causes the difficulty of Vt control. At the same time, it is difficult to achieve uniformity within such a small Fin due to plasma or in-situ epitaxial doping, and impurity implantation also brin...
Claims
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IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/785H01L29/0669H01L29/66795H01L21/02532H01L29/161H01L29/0676H01L21/02381H01L21/02639H01L21/0262H01L29/1054H01L29/7843H01L29/7846H01L21/823431H01L29/66818
Inventor 李永亮都安彦吴振华李超雷王文武
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI