Semiconductor device, preparation method of semiconductor device, and electronic equipment comprising device
A semiconductor and device technology, applied in the field of semiconductor devices and their production, and electronic equipment, can solve problems such as threshold control difficulties
Active Publication Date: 2019-09-10
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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[0004] The purpose of the present invention is at least partly to provide a semiconductor device and its manufacturing method and electronic equipment including the semiconductor to solve the problem of difficult threshold control
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[0034] The following disclosure provides a number of different embodiments or examples for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include embodiments in which the first component and the second component are in direct contact, and may include additional components formed between the first component and the second component An embodiment such that the first part and the second part are not in direct contact.
[0035] In addition, for the convenience of description, spatial relationship terms such as "below", "beneath", "lower", "above", "upper" may be used herein to describe The relationship of one element or component to another element or component is shown. Spatially relative te...
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The invention provides a semiconductor device, a preparation method of the semiconductor device, and electronic equipment comprising the device. The semiconductor device comprises a substrate, an SiGefin and a shallow trench isolation region, wherein the substrate is a silicon substrate or an SOI substrate; the SiGe fin is formed above the substrate, and has an SixGe1-x / SiyGe1-y / SizGe1-z sandwichstructure containing different Ge contents in a horizontal direction; a value of x is 0.05-0.95; a value of y is 0.1-0.9; a value of z is 0.05-0.95; the shallow trench isolation region is arranged above the substrate, and formed on an opposite side of the SiGe fin; and one end, far away from the substrate, of the SiGe fin extrudes out of the shallow trench isolation region. The invention providesa SixGe1-x / SiyGe1-y / SizGe1-z Fin device structure similar to a sandwich structure with different Ge contents. A band gap can be changed by adjusting the Ge contents, so that a threshold can be adjusted, and electrical properties such as a migration rate (effective mass change), electric leakage and the like can be improved. The device can be applied in a FinFET or a perpendicular nanowire.
Description
technical field [0001] The present invention relates to the field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and electronic equipment including the device. Background technique [0002] With the shrinking of device feature size, three-dimensional FinFET and nanowire devices with SiGe high-mobility channels have become research hotspots. Among them, the threshold control of 3D devices such as SiGe material FinFET is an important challenge. This is because the Fin height of a conventional FinFET is about 50nm, the width of Fin is about 15nm, and the doping concentration adjusted by Vt is generally 5E17 to 3E18cm -3 The order of magnitude, the number of implanted impurities is about 20, and the fluctuation of the process makes it difficult to control Vt. At the same time, it is difficult to achieve uniformity in such a small Fin due to plasma or in-situ epitaxial doping, and impurity implantation will also bring about the impac...
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IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/785H01L29/0669H01L29/66795H01L21/02532H01L29/161H01L29/0676H01L21/02381H01L21/02639H01L21/0262H01L29/1054H01L29/7843H01L29/7846H01L21/823431H01L29/66818
Inventor 李永亮都安彦吴振华李超雷王文武
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI