Drive circuit of power conversion device and power conversion device

A technology of power conversion device and drive circuit, which is applied in the direction of output power conversion device, conversion of AC power input to DC power output, electrical components, etc., which can solve the problem of increasing the number of parallel connections in cost and inability to maximize the performance of power semiconductor components, etc. problem, achieve the effect of improving current unbalance and reliability

Active Publication Date: 2021-05-28
HITACHI LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the performance of power semiconductor components cannot be fully utilized
[0004] As a conventional technology, power semiconductor elements are screened and power semiconductor elements with the same characteristics are combined together, but cost increases and restrictions on the number of parallel connections due to characteristic screening are problems.

Method used

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  • Drive circuit of power conversion device and power conversion device
  • Drive circuit of power conversion device and power conversion device
  • Drive circuit of power conversion device and power conversion device

Examples

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Embodiment Construction

[0031] Hereinafter, a driving circuit of a power conversion device according to an embodiment of the present invention will be described with reference to the drawings. In addition, the same code|symbol is attached|subjected to the same element in each figure, and overlapping description is abbreviate|omitted.

[0032] figure 1 It is a configuration diagram of a power conversion device and its driving circuit according to an embodiment of the present invention.

[0033] The power conversion device 60 according to this embodiment includes: a power conversion unit 111 including an upper arm element (upper arm power semiconductor element) 311 and a lower arm element (lower arm power semiconductor element) 301 ; and a drive circuit for driving the power conversion unit 111 50 ; and the temperature sensor 30 (an example of a temperature detection unit) shared by the upper arm element 311 and the lower arm element 301 . As the power semiconductor element, an insulated gate bipolar...

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Abstract

If a temperature difference occurs between the parallel-connected power semiconductor elements, the heat generation of the parallel-connected power semiconductor elements will become non-uniform, and reliability will decrease. A drive circuit of a power conversion device including a power conversion unit including an upper arm element (upper arm power semiconductor element) and a lower arm element (lower arm power semiconductor element) has a variable a voltage source; and a voltage control unit that changes a negative bias voltage generated by the variable voltage source in accordance with an output of a temperature detection unit shared by the upper arm element and the lower arm element. The positive side of the variable voltage source is connected to the high voltage side of the lower arm element. The low voltage side of the lower arm element is connected to one end of the capacitive element belonging to the lower arm. The other end of the capacitive element is connected to the anode terminal of the high withstand voltage diode. The cathode terminal of the high withstand voltage diode is connected to the negative side of the variable voltage source. If the lower arm element is turned on, charging current flows from the variable voltage source to the capacitive element.

Description

technical field [0001] The present invention generally relates to a power conversion device and a drive circuit thereof used for converting direct current to alternating current or converting alternating current to direct current. Background technique [0002] In recent years, there has been a demand for higher output density of an inverter device as an example of a power conversion device, and miniaturization and weight reduction of the power conversion device have been progressing. As the size of power conversion units (parts of power conversion devices) integrated with power semiconductor modules, capacitors, bus bars, etc. mounted with power semiconductor elements progresses in size, it is used to drive power semiconductor elements There is an increasing demand for downsizing and cost reduction of circuits. In addition, a power conversion device is realized by mounting a plurality of power conversion units integrated with power semiconductor modules, capacitors, bus bar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M7/217H02M7/537
CPCH02M7/217H02M7/537
Inventor 三间彬松元大辅松本洋平大沼直人保立尚史
Owner HITACHI LTD
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