Vertical gasb nanowire on silicon substrate and its preparation method

A technology of nanowires and silicon substrates, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, single crystal growth, etc., can solve large lattice mismatch, reduce the diffusion length of adatoms, and make GaSb nanowires difficult, etc. question

Active Publication Date: 2021-05-11
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the preparation of GaSb nanowires is particularly difficult, mainly due to the following reasons: (1) GaSb nanowires have a large lattice mismatch with common commercial substrates (such as silicon substrates); (2) Sb, as a surfactant, Usually have negative effects on the growth of nanowires, such as reducing the diffusion length of adatoms, thereby inhibiting the anisotropic growth of nanowires
[0003] At present, GaSb nanowires are prepared by changing the source process or special substrates (such as GaAs(111) plane), and it is still a huge challenge to grow GaSb nanowires directly on silicon substrates.

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  • Vertical gasb nanowire on silicon substrate and its preparation method

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no. 1 example

[0032] In a first exemplary embodiment of the present disclosure, a method for preparing vertical GaSb nanowires on a silicon substrate is provided.

[0033] figure 1 It is a flowchart of a method for preparing vertical GaSb nanowires on a silicon substrate according to an embodiment of the present disclosure.

[0034] refer to figure 1 As shown, the preparation method of the silicon substrate vertical GaSb nanowire of the present disclosure includes:

[0035] Step S11: obtaining a silicon substrate with a fresh cleavage plane;

[0036] Cleave the silicon wafer to obtain a silicon substrate with a fresh cleavage plane, for example, by cleaving a silicon substrate (such as a commercial silicon substrate) to obtain a silicon substrate with a fresh (non-contaminated surface) cleavage plane. substrate, because GaSb nanowires always grow along the direction with the lowest energy, so the appropriate cleavage plane can be selected according to actual needs to design the epitaxia...

no. 2 example

[0066] In a second exemplary embodiment of the present disclosure, a vertical GaSb nanowire on a silicon substrate is provided. The vertical GaSb nanowire is prepared by the preparation method disclosed in the present disclosure.

[0067] In this embodiment, the diameter of the vertical GaSb nanowire is 20-70 nm.

[0068] The vertical GaSb nanowire has uniform appearance, small diameter, large output, good uniformity and repeatability, excellent growth direction controllability, and good compatibility with modern semiconductor processes; in addition, the prepared vertical GaSb nanowire material It has the advantages of being very easy to peel off and transfer from the substrate, which is beneficial to subsequent device processing and effectively saves the production cost of the device.

[0069] In summary, the present disclosure provides a vertical GaSb nanowire on a silicon substrate and a preparation method thereof, through special treatment of the silicon substrate and con...

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Abstract

A vertical GaSb nanowire on a silicon substrate and a preparation method thereof, the preparation method comprising: cleaving a commercial silicon wafer to obtain a silicon substrate with a fresh cleavage plane; transferring the silicon substrate with a fresh cleavage plane to a growing In the chamber; set the growth conditions, including: the growth temperature of GaSb nanowires and the amount of Ga source and Sb source; after waiting for the growth conditions to reach the set value, turn on the Ga source and Sb source at the same time to grow GaSb nanowires; The Ga source and the Sb source are simultaneously turned off at the end of the growth of the GaSb nanowire to obtain a vertical GaSb nanowire; wherein, the growth of the vertical GaSb nanowire does not require the assistance of an external metal catalyst. The prepared vertical GaSb nanowires have uniform morphology, small diameter, large output, good uniformity and repeatability, excellent growth direction controllability, and good compatibility with modern semiconductor processes; Advantages such as upper peeling and transfer are beneficial to subsequent device processing, and at the same time, the production cost of the device is effectively saved.

Description

technical field [0001] The disclosure belongs to the preparation technology of low-dimensional semiconductor materials, and relates to a vertical GaSb nanowire on a silicon substrate and a preparation method thereof, especially a method through specific treatment of commercial silicon substrates combined with no need for external metal catalyst assistance A preparation method for directly growing vertical GaSb nanowires on a silicon substrate and vertical GaSb nanowires prepared by the preparation method. Background technique [0002] III-V semiconductor nanowires have important application prospects in the fields of next-generation high-performance nanoelectronic devices, nanophotonic devices, and quantum devices. Among them, GaSb nanowires have the highest hole mobility and narrow direct bandgap, making them ideal materials for tunneling field-effect transistors, infrared detectors, and topological quantum computing. However, the preparation of GaSb nanowires is particula...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L21/02C30B25/18C30B29/40
CPCC30B25/18C30B29/40H01L21/02381H01L21/02549H01L21/02603H01L21/02609H01L21/0262
Inventor潘东文炼均赵建华
OwnerINST OF SEMICONDUCTORS - CHINESE ACAD OF SCI