44results about How to "The reaction raw materials are simple" patented technology

The invention provides a preparation method of an aluminum oxide coated silicon cathode material. The preparation method comprises the following steps: (A) in an oxygen-containing atmosphere, carrying out heat treatment of 500-1000 DEG C on nanometer silicon powder to obtain preoxidized nanometer silicon; (B) mixing the preoxidized nanometer silicon with aluminum powder and tin powder, and carrying out heat treatment of 400-900 DEG C to obtain an intermediate; and (C) treating the intermediate with acid or an oxidant to obtain the aluminum oxide coated silicon cathode material. In the preparation method, the thickness of an aluminum oxide coating layer can be controlled by adjusting the technological conditions of nanometer silicon preoxidization; the reaction raw materials are simple, flammable and combustible organic reactants and complex vacuum systems do not need to be used in the preparation process, the operation process is simple and practicable, the practicability degree is high, and the cost is low. The silicon substrate cathode material prepared and obtained by the preparation method has more stable surface structure in the lithium deembedding and embedding process, and is high in capacity retention ratio, high in cycling stability and high in performance.

The invention relates to a method for preparing FexPO4 by electrolyzing ferrophosphorus, which comprises the following steps: by using ferrophosphorus as the anode and providing an oxygen source by using oxygen in water as the product, electrolyzing to obtain a FexPO4 solution, wherein only ferrophosphorus and water are consumed in the reaction process; adding basic oxides to regulate the pH value of the solution so as to settle out FexPO4; and granulating, filtering and washing to obtain the finished FexPO4 product. In the method, cheap ferrophosphorus is converted into high-value FexPO4 by using the electrolytic reaction process; the source of ferrophosphorus is not limited; the influence of impurity elements on the product can be eliminated; the product can be granulated into controlled shape and particle size; the byproduct H2 can be recycled; the treated filtrate can be used cyclically; the obtained finished FexPO4 product has the advantages of high purity, small particle size, easily controlled shape, and low power consumption; the reaction process has low requirements for equipment and is easy to operate; and the preparation method has the advantages of simple technique, high resource utilization rate, low cost, low investment, good benefit, high cleanness and environmental protection, can be easily industrialized, and is suitable for high-value comprehensive utilization of byproducts in chemical industry and large-scale industrial low-cost clean production of high-end phosphates.

The invention relates to a preparation method of a single crystal high Al component AlxGa1-xN ternary alloy nanorod. The method includes: firstly preparing a silicon substrate with deposited thin layer aluminum powder having a deposition thickness of 0.5-1.0mm, then spreading metal Al powder flatly at one end of a reaction boat, placing the silicon substrate above the powder, dripping Ga liquid tothe other end of the reaction boat, putting a reaction device into a quartz test tube with one opening end, performing sealing and vacuum pumping; when the vacuum degree is less than or equal to 5Pa,introducing argon to fill the whole atmosphere with argon, then adjusting the argon flow rate, conducting heating to 900-1000DEG C, adjusting the argon flow rate to 40-60sccm, at the same time, introducing ammonia with the same flow rate to argon, keeping the state for 1-3h, and conducting furnace cooling, thus obtaining the high Al component single crystal AlxGa1-xN ternary alloy nanorod, wherein the adjustable range x of the Al component is less than or equal to 0.92 and greater than or equal to 0.88. The method has the advantages of simple process, good reproducibility, no phase separation, low production cost, no adding of any catalyst and template, and is easy for industrial popularization and application.

The invention discloses a high-Al component AlxGa(1-x)N ternary alloy microcrystal sphere and a preparation method thereof and belongs to the technical field of semiconductor alloy material preparation. The microcrystal sphere is an AlxGa(1-x)N ternary alloy crystal of different wurtzite structures of an A1 component, the adjustable range x of the Al component is greater than or equal to 0.77 andless than 1, and the average diameter of the microcrystal sphere is 5.0 [mu]m. The preparation method of the microcrystal sphere comprises the following steps: by taking metal aluminum powder, metal gallium and an ammonia gas as reaction raw materials, vacuuming, introducing argon with the flow of 300-700 sccm, 10-15 minutes later, adjusting the flow of the argon to 40-60sccm, at the same time introducing an ammonia gas of the flow identical to that of the argon, heating to reaction temperature of 950-1000 DEG C within 1-3 hours, and performing vapor deposition method growth, thereby obtainingthe high-Al component AlxGa(1-x)N ternary alloy microcrystal sphere. The method is simple in process, good in repeatability, free of phase separation, low in production cost, free of catalyst or template and easy in industrial popularization and application.