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Preparation method of single crystal high Al component AlxGa1-xN ternary alloy nanorod

A ternary alloy and nanorod technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of spontaneous phase separation, unsuitable for commercial development, high cost, etc., to achieve the suppression of phase separation, Simple preparation process and good repeatability

Active Publication Date: 2018-02-16
SHENYANG LIGONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The reaction source used in the third MBE method is simple, but the MBE method is not suitable for commercial development due to its own characteristics and its high cost
Moreover, both MOCVD and MBE methods showed spontaneous phase separation.
At present, this method has not been used to achieve high Al composition tunable Al x Ga 1- x Report on N Ternary Alloy Nanorods

Method used

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  • Preparation method of single crystal high Al component AlxGa1-xN ternary alloy nanorod
  • Preparation method of single crystal high Al component AlxGa1-xN ternary alloy nanorod
  • Preparation method of single crystal high Al component AlxGa1-xN ternary alloy nanorod

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Experimental program
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Effect test

Embodiment 1

[0051] A single crystal high Al composition Al x Ga 1-x The preparation method of N ternary alloy nanorods comprises the following steps:

[0052] Step 1, pre-deposition thin layer of aluminum powder

[0053] (1) Ultrasonic treatment is carried out to the silicon substrate with deionized water, and after cleaning, the silicon substrate after ultrasonic is obtained;

[0054] Add aluminum powder with a purity of 99.999 and an average particle size of 5 μm into ethanol, and perform ultrasonic vibration for 20 minutes. When the aluminum powder is uniformly dispersed, the ultrasonically mixed aluminum powder is obtained;

[0055] (2) Put the ultrasonicated silicon substrate into the ultrasonicated aluminum powder mixture, and air-dry naturally to obtain a silicon substrate with a thin layer of aluminum powder deposited; the deposition thickness of the thin layer of aluminum powder is 0.5 mm.

[0056] Step 2, preparation preparation

[0057] Evenly spread 10g of metal Al powder ...

Embodiment 2

[0070] A single crystal high Al composition Al x Ga 1-x The preparation method of N ternary alloy nanorods is the same as in Example 1, the difference is that step 4, heating

[0071] (1) Under the protection of argon, the reaction system is heated with a heating rate of 30°C / min. When the furnace temperature of the reaction system reaches the set temperature of 950°C, the argon flow rate is adjusted to 50 sccm, and at the same time, the flow rate is Be the ammonia gas of 50 sccm, after keeping 2h, stop heating;

[0072] (2) Cooling with the furnace, when the temperature drops to 700°C, turn off the flow of ammonia gas, continue to feed argon to ensure the argon atmosphere, and cool to room temperature with the furnace;

[0073] (3) After complete cooling, take out the reaction device, and the off-white substance deposited on the surface of the thin-layer aluminum powder silicon substrate is Al x Ga 1-x N ternary alloy nanorods.

[0074] Prepared Al x Ga 1-x N ternary a...

Embodiment 3

[0076] A single crystal high Al composition Al x Ga 1-x The preparation method of N ternary alloy nanorods is the same as in Example 1, the difference is that,

[0077] Step 4, heating

[0078] (1) Under the protection of argon, the reaction system is heated at a rate of 30°C / min. When the furnace temperature of the reaction system reaches the set temperature of 1000°C, the argon flow rate is adjusted to 50 sccm, and at the same time, the flow rate is Be the ammonia gas of 50 sccm, after keeping 2h, stop heating;

[0079] (2) Cooling with the furnace, when the temperature drops to 700°C, turn off the flow of ammonia gas, continue to feed argon to ensure the argon atmosphere, and cool to room temperature with the furnace;

[0080] (3) After complete cooling, take out the reaction device, and the off-white substance deposited on the surface of the thin-layer aluminum powder silicon substrate is Al x Ga 1-x N ternary alloy nanorods.

[0081] Prepared Al x Ga 1-x N ternary...

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Abstract

The invention relates to a preparation method of a single crystal high Al component AlxGa1-xN ternary alloy nanorod. The method includes: firstly preparing a silicon substrate with deposited thin layer aluminum powder having a deposition thickness of 0.5-1.0mm, then spreading metal Al powder flatly at one end of a reaction boat, placing the silicon substrate above the powder, dripping Ga liquid tothe other end of the reaction boat, putting a reaction device into a quartz test tube with one opening end, performing sealing and vacuum pumping; when the vacuum degree is less than or equal to 5Pa,introducing argon to fill the whole atmosphere with argon, then adjusting the argon flow rate, conducting heating to 900-1000DEG C, adjusting the argon flow rate to 40-60sccm, at the same time, introducing ammonia with the same flow rate to argon, keeping the state for 1-3h, and conducting furnace cooling, thus obtaining the high Al component single crystal AlxGa1-xN ternary alloy nanorod, wherein the adjustable range x of the Al component is less than or equal to 0.92 and greater than or equal to 0.88. The method has the advantages of simple process, good reproducibility, no phase separation, low production cost, no adding of any catalyst and template, and is easy for industrial popularization and application.

Description

technical field [0001] The invention belongs to the technical field of nanostructure growth of Group III nitride semiconductor alloys, in particular to a single crystal high Al composition Al x Ga 1-x A method for preparing N ternary alloy nanorods. Background technique [0002] Group III nitrides AlN and GaN are important wide-bandgap semiconductor optoelectronic materials with high direct bandgap and excellent optoelectronic properties. With the rapid development of GaN-based blue LEDs, research on shorter-wavelength ultraviolet LED light sources has also aroused great enthusiasm among scientific researchers. AlGaN material with high Al composition is the mainstream material for making optoelectronic devices such as ultraviolet detectors, deep ultraviolet light-emitting diodes, and flat panel displays. Low-cost, environmentally friendly and non-toxic, it has greater advantages than traditional gas ultraviolet light sources such as mercury lamps and xenon lamps, and has ...

Claims

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Application Information

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IPC IPC(8): C30B29/40C30B29/60C30B25/02
CPCC30B25/02C30B29/403C30B29/60
Inventor 沈龙海吕伟
Owner SHENYANG LIGONG UNIV
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