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Doped perovskite layer, perovskite cell and preparation method of perovskite cell

A perovskite battery and perovskite technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of perovskite film flatness, low crystallinity, temperature and humidity sensitivity, etc., and achieve high crystallinity , improve crystallinity, and good stability

Pending Publication Date: 2021-01-12
HANGZHOU MICROQUANTA SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, doping with halogens in this method will easily affect the flatness of the perovskite film during the preparation process, be more sensitive to temperature and humidity, and have lower crystallinity.

Method used

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  • Doped perovskite layer, perovskite cell and preparation method of perovskite cell
  • Doped perovskite layer, perovskite cell and preparation method of perovskite cell

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[0031] The present invention also discloses a method for preparing the doped perovskite layer as described above, the preparation method is a solution method, comprising the following steps:

[0032] Step (1), preparing the precursor mixture, the precursor organic halide AY, the monovalent inorganic metal halide BY, the divalent inorganic metal compound CX 2 and CY 2 , and the solvents are stirred and mixed with each other. Divalent inorganic metal compound CX 2 including PbCl 2 , PbBr 2 , PbI 2 , Pb(CH 3 COO) 2 , SnI 2 , Pb(SCN) 2 at least one of. The solvent includes a main solvent and an auxiliary solvent, the main solvent includes at least one of DMF, DMSO, etc., and the auxiliary solvent includes at least one of NMP, DMI, surfactant, etc.

[0033] Step (2), coating the precursor mixture prepared in step (1) on the substrate deposited with the transfer layer by any one of spin coating, blade coating, slit continuous coating, and spray coating, and obtaining Anne...

Embodiment 1

[0048] The present invention utilizes gas-phase method to prepare doped perovskite layer, and thus prepares the embodiment of perovskite battery, comprises the following steps:

[0049] (11) Clean the 5×5cm ITO glass plate sequentially with detergent, deionized water, acetone, and isopropanol for 30 minutes, and then use nitrogen (N 2 ) was dried and treated with UV O-zone for 10 minutes.

[0050] (12) Preparation of NiO x The thin film acts as a hole transport layer.

[0051] (13) Preparation of doped or modified divalent inorganic metal compound precursor: 369 mg of PbI 2 (0.8mmol), 56mg of PbCl 2 (0.2mmol) and 13mg of CsI (0.05mmol) were dissolved in 1mL of DMF solution, and 70.9uL of anhydrous DMSO was added, heated and stirred at 60°C for 2h, and mixed completely before use.

[0052] (14) Preparation of doped chloride ion (chloride ion Cl - through PbCl 2 Incorporated) inorganic metal compound thin films.

[0053] (15) Place the prepared inorganic metal compound fi...

Embodiment 2

[0058] The present invention utilizes the solution method to prepare the doped perovskite layer, and thus prepares the embodiment of the perovskite battery, comprising the following steps:

[0059] (21) Clean the 5×5cm ITO glass plate sequentially with detergent, deionized water, acetone, and isopropanol for 30 minutes, and then use nitrogen (N 2 ) was dried and treated with UV O-zone for 10 minutes.

[0060] (22) Prepare PEDOT:PSS film on the cleaned ITO glass as a hole transport layer.

[0061] (23) Preparation of doped or modified perovskite solution: 415 mg of PbI 2 (0.9mmol), 37mg of PbBr 2 (0.1mmol), 8.3mg of KI (0.05mmol), and 159mg of MAI (1mmol) were dissolved in 1mL of DMF solution, and 68uL of anhydrous DMSO was added, heated and stirred at 50°C for 2h, and mixed completely before use.

[0062] (24) Prepare a perovskite film doped with Br element by scraping coating method using doped perovskite solution, and anneal at 60~150°C for 10~120min, with a thickness of 20...

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Abstract

The invention relates to a doped perovskite layer, which contains a compound with a structural general formula AnB<1-n>CXmY<3-m>, wherein 0<n<=1, 0<m<3, A is a positive monovalent nonmetal ion or group comprising at least one of amines, amido derivatives, amidines and amidino derivatives, and B is any one of potassium, cesium and rubidium; C is a positive divalent metal cation including at least one positive monovalent metal cation of lead, tin, tungsten, copper, zinc, gallium, germanium, arsenic, selenium, rhodium, palladium, silver, cadmium, indium, antimony, osmium, iridium, platinum, gold,mercury, thallium, bismuth and polonium; X is a negative monovalent anion or group and comprises at least one of chlorine, bromine, iodine, thiocyanate, acetate, cyanide and oxycyanide, and Y is iodide ions. The invention also discloses a perovskite cell containing the doped perovskite layer and a preparation method of the perovskite cell. According to the invention, the halogen source in the crystallization process of the perovskite material is regulated and controlled, and the method for preparing the doped perovskite layer with high crystallinity and good stability is provided.

Description

technical field [0001] The invention belongs to the field of perovskite technology, in particular to a doped perovskite layer, a perovskite battery and a preparation method thereof. Background technique [0002] In recent years, a perovskite solar cell has received extensive attention, and the perovskite is ABX 3 type cubic octahedral structure. Perovskite solar cells use organometallic halides as light-absorbing layers. Since they were first reported in 2009, their photoelectric conversion efficiency has jumped from the initial 3.8% to 25.2%, which is higher than that of commercial crystalline silicon solar cells and has a relatively high Great cost advantage. The introduction of perovskite solar cells into the market and large-scale application is just around the corner, and is expected to lead the new trend of the solar cell market in the future. [0003] Although the development potential of perovskites is huge, there are still some factors that hinder their photoel...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/15H10K71/164H10K85/30H10K30/10H10K2102/00Y02E10/549
Inventor 不公告发明人
Owner HANGZHOU MICROQUANTA SEMICON CO LTD
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