High-Al component AlxGa(1-x)N ternary alloy microcrystal sphere and preparation method thereof

A technology of ternary alloys and microcrystalline balls, applied in chemical instruments and methods, single crystal growth, crystal growth, etc., can solve problems such as high cost, spontaneous phase separation, unsuitable for commercial development, etc., to achieve inhibition of phase separation, The effect of good repeatability and simple preparation process

Active Publication Date: 2018-02-27
SHENYANG LIGONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The reaction source used in the third MBE method is simple, but the MBE method is not suitable for commercial development due to its own characteristics and its high cost
Moreover, both MOCVD and MBE methods showed spontaneous phase separation.
At present, this method has not been used to achieve high Al composition tunable Al x Ga 1-x Report on Microcrystalline Spherule of N Ternary Alloy

Method used

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  • High-Al component AlxGa(1-x)N ternary alloy microcrystal sphere and preparation method thereof
  • High-Al component AlxGa(1-x)N ternary alloy microcrystal sphere and preparation method thereof
  • High-Al component AlxGa(1-x)N ternary alloy microcrystal sphere and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0047] A high Al component Al x Ga 1-x N ternary alloy microcrystalline ball, Al with x=0.77 x Ga 1-x The diffraction angles of the characteristic peaks (100), (002) and (101) of the XRD pattern of the N semiconductor alloy are between the diffraction angles of the wurtzite structure AlN and GaN, indicating that the product is an AlGaN crystal with a wurtzite structure, see figure 2 .

[0048] For high Al component Al x Ga 1-x Scanning analysis of N(x=0.77) microcrystalline spheres, see the scanning electron microscope picture image 3 , It can be drawn from the figure that Al 0.77 Ga 0.23 The morphology of the N ternary alloy microcrystalline ball, the microcrystalline ball has a regular and uniform spherical structure, and its average diameter is 5.0 μm.

[0049] A high Al component Al x Ga 1-x The preparation method of N ternary alloy microcrystalline ball includes the following steps:

[0050] Step 1. Pre-deposit thin aluminum powder

[0051] (1) Ultrasonic treatment of the silic...

Embodiment 2

[0065] A high Al component Al x Ga 1-x N ternary alloy microcrystalline ball, Al x Ga 1-x N semiconductor alloy with wurtzite structure AlGaN crystal. The microcrystalline ball has a regular and uniform spherical structure with an average diameter of 5.0 μm.

[0066] A high Al component Al x Ga 1-x The preparation method of N ternary alloy microcrystalline ball includes the following steps:

[0067] Step 1. Pre-deposit thin aluminum powder

[0068] (1) Ultrasonic treatment of the silicon substrate with ethanol, and after cleaning, an ultrasonic silicon substrate is obtained;

[0069] Add aluminum powder with a purity of 99.999 and an average particle size of 10 μm into methanol, and perform ultrasonic vibration for 60 minutes. When the aluminum powder is uniformly dispersed, an ultrasonic aluminum powder mixture is obtained;

[0070] (2) Put the ultrasonic silicon substrate into the ultrasonic aluminum powder mixture, and air dry to obtain a silicon substrate deposited with a thin laye...

Embodiment 3

[0082] A high Al component Al x Ga 1-x N ternary alloy microcrystalline ball, Al x Ga 1-x N semiconductor alloy with wurtzite structure AlGaN crystal. The microcrystalline ball has a regular and uniform spherical structure with an average diameter of 5.0 μm.

[0083] A high Al component Al x Ga 1-x The preparation method of N ternary alloy microcrystalline ball includes the following steps:

[0084] Step 1. Pre-deposit thin aluminum powder

[0085] (1) Ultrasonic treatment of the silicon substrate with deionized water, and after cleaning, an ultrasonic silicon substrate is obtained;

[0086] Add aluminum powder with a purity of 99.999 and an average particle size of 8 μm into methanol, and perform ultrasonic vibration for 40 minutes. When the aluminum powder is uniformly dispersed, an ultrasonic aluminum powder mixture is obtained;

[0087] (2) Put the ultrasonic silicon substrate into the ultrasonic aluminum powder mixture and air dry to obtain a silicon substrate deposited with a thi...

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Abstract

The invention discloses a high-Al component AlxGa(1-x)N ternary alloy microcrystal sphere and a preparation method thereof and belongs to the technical field of semiconductor alloy material preparation. The microcrystal sphere is an AlxGa(1-x)N ternary alloy crystal of different wurtzite structures of an A1 component, the adjustable range x of the Al component is greater than or equal to 0.77 andless than 1, and the average diameter of the microcrystal sphere is 5.0 [mu]m. The preparation method of the microcrystal sphere comprises the following steps: by taking metal aluminum powder, metal gallium and an ammonia gas as reaction raw materials, vacuuming, introducing argon with the flow of 300-700 sccm, 10-15 minutes later, adjusting the flow of the argon to 40-60sccm, at the same time introducing an ammonia gas of the flow identical to that of the argon, heating to reaction temperature of 950-1000 DEG C within 1-3 hours, and performing vapor deposition method growth, thereby obtainingthe high-Al component AlxGa(1-x)N ternary alloy microcrystal sphere. The method is simple in process, good in repeatability, free of phase separation, low in production cost, free of catalyst or template and easy in industrial popularization and application.

Description

Technical field [0001] The invention belongs to the technical field of preparation of semiconductor alloy materials, and specifically relates to a high-Al composition Al x Ga 1-x N ternary alloy microcrystalline ball and its preparation method. Background technique [0002] Group III nitrides AlN and GaN are important wide-bandgap semiconductor optoelectronic materials, which have a high direct band gap and excellent optoelectronic properties. With the rapid development of GaN-based blue LEDs, the research on shorter wavelength UV LED light sources has also aroused great enthusiasm among scientific researchers. High-Al content AlGaN materials are the mainstream materials for preparing photoelectric devices such as ultraviolet detectors, deep ultraviolet light-emitting diodes, flat panel displays, etc. Deep ultraviolet LEDs prepared from them are small in size, simple in structure, well integrated, and have long life and power consumption. Low, environmentally friendly and non-to...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): C30B29/40C30B29/60C30B25/02
CPCC30B25/02C30B29/403C30B29/60
Inventor沈龙海吕伟
OwnerSHENYANG LIGONG UNIV