Flash memory device and programming method thereof

Abstract

The invention provides a flash memory device and a programming method thereof. The programming of the flash memory includes: setting the initial programming voltage, and performing the first programming action on a plurality of flash memory cells according to the initial programming voltage; after the first programming action, detecting the critical voltage of the flash memory cell and obtaining The highest critical voltage; setting the target critical voltage, generating a second programming voltage according to the target critical voltage, the initial programming voltage and the highest critical voltage; performing a second programming operation on the flash memory cell according to the second programming voltage; After the programming action, verify the flash memory cells with the same or different verification voltages, and based on the second programming voltage, perform an incremental action according to the programming step value to generate at least one third programming voltage; The memory cell performs at least a third programming operation; and makes the flash memory cell pass the verification voltage according to the final programming voltage.

Description

technical field [0001] The invention relates to a flash memory device and a programming method thereof. Background technique [0002] With the popularization of electronic products, providing high-quality data storage media has become one of the important specifications of electronic products in order to meet the massive information needs of users. In today's technical field, a flash memory capable of writing and reading data has become a necessary data storage medium for electronic products. [0003] When programming the flash memory, it is difficult to set the programming voltage for the first time. When the setting of the programming voltage for the first time is too large, it is easy to produce a poor critical voltage distribution state of the memory cells. When The setting of the programming voltage for the first time is too small, resulting in a long programming time. In addition, since the memory cells are distributed in multiple positions in the integrated circuit,...

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Problems solved by technology

[0003] When programming the flash memory, it is difficult to set the programming voltage for the first time. When the setting of the programming voltage for the first time is too large, it is easy to produce a poor critical voltage distribution state of the memory cells. When The setting of the programming voltage for the first time is too small, resulting in a long programming time

In addition, because the memory cells are distributed in multiple positions in the integrated circuit, the result of the programming action is easily related to the configuration position of the memory cells, and the threshold voltage distribution of the programmed memory cells cannot be optimized.

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