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Photoelectric sensing unit and its preparation method and photoelectric sensor

A technology of photoelectric sensing and photosensitive elements, applied in the field of sensors

Active Publication Date: 2021-04-09
FUZHOU BOE OPTOELECTRONICS TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current photoelectric sensors (such as CCD, CMOS) can sense the small angle of incident light (FOV) due to size limitations, and are sensitive to light in environments with weak light (such as deep sea / night) and full-screen image recognition. Scene applications with high FOV requirements are limited
Therefore, the current photoelectric sensor still needs to be improved

Method used

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  • Photoelectric sensing unit and its preparation method and photoelectric sensor
  • Photoelectric sensing unit and its preparation method and photoelectric sensor
  • Photoelectric sensing unit and its preparation method and photoelectric sensor

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Embodiment Construction

[0026] Embodiments of the present invention are described in detail below. The embodiments described below are exemplary only for explaining the present invention and should not be construed as limiting the present invention. If no specific technique or condition is indicated in the examples, it shall be carried out according to the technique or condition described in the literature in this field or according to the product specification. The reagents or instruments used were not indicated by the manufacturer, and they were all commercially available conventional products.

[0027] In one aspect of the invention, the invention provides a photoelectric sensing unit. According to an embodiment of the present invention, refer to figure 1 , the photoelectric sensing unit includes: a substrate 10; a photosensitive structure layer 20, the photosensitive structure layer 20 is arranged on the substrate 10, and includes a transparent layer 21 and a plurality of photosensitive element...

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Abstract

The invention provides a photoelectric sensing unit, a preparation method thereof, and a photoelectric sensor. The photoelectric sensing unit includes: a substrate; a photosensitive structural layer, the photosensitive structural layer is arranged on the substrate, and includes a transparent layer and a plurality of photosensitive elements; Wherein, the transparent layer includes a connected first section and a second section, the first section is in direct contact with the substrate, and the second section is curled away from the substrate and close to the first section, A plurality of the photosensitive elements are arranged at intervals on the surface of the second segment facing the inside, and the surface of the second segment facing the outside has a plurality of protruding parts protruding outward, and the protruding parts are used to The light incident on the transparent layer outside is converged into the photosensitive element. The photoelectric sensing unit can realize a large angle of sensing incident light, and at the same time can obviously enhance the light sensitivity.

Description

technical field [0001] The invention relates to the technical field of sensors, in particular to a photoelectric sensing unit, a preparation method thereof and a photoelectric sensor. Background technique [0002] Photoelectric sensors are widely used in the fields of optical communication, imaging and detection. However, the current photoelectric sensors (such as CCD, CMOS) can sense the incident light angle (FOV) is small due to size limitations, and are sensitive to light in environments with weak light (such as deep sea / night) and full-screen image recognition. Scene applications with high FOV requirements are limited. Therefore, the current photoelectric sensor still needs to be improved. Contents of the invention [0003] The present invention aims to solve one of the technical problems in the related art at least to a certain extent. Therefore, an object of the present invention is to provide a photoelectric sensing unit with a larger FOV and better light sensiti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0232H01L31/0236H01L31/113H01L27/144H01L31/18
CPCH01L27/1446H01L31/02327H01L31/0236H01L31/1136H01L31/1804Y02P70/50
Inventor 杨姗姗胡龙敢欧忠星陈运金林忱
Owner FUZHOU BOE OPTOELECTRONICS TECH CO LTD
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