A kind of zno/ingan heterojunction light emitting diode and preparation method thereof
A technology of light-emitting diodes and heterojunctions, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of poor quality of InGaN crystals, enhanced quantum-confined Stark effect, and difficulties in InGaN green LEDs, and achieves reduced dependence, Stable light emission and good performance
Active Publication Date: 2022-01-18
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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However, the increase of In composition will lead to the enhancement of quantum confinement Stark effect, and at the same time lead to the deterioration of InGaN crystal quality, making it extremely difficult to manufacture high-efficiency and high-brightness InGaN green LEDs
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[0019] Put the p-InGaN substrate 2 in a high-temperature tube furnace, set the temperature at 800°C, keep it warm for 2 hours, turn off the power supply and let it cool to room temperature with the furnace to achieve the purpose of annealing; then place the annealed p-InGaN substrate Substrate 2 was placed in a trichlorethylene solution and cleaned with an ultrasonic cleaning instrument for 15 minutes, then cleaned with acetone, ethanol, and deionized water, and then cleaned with an ultrasonic cleaning instrument for 15 minutes, and then nitrogen was used to blow off the moisture on the substrate surface, and finally placed in Dry in a drying oven for later use. The p-InGaN substrate 2 has a thickness of 665 μm, a size of 1 cm×0.5 cm, and a hole concentration of 1.7×10 18 piece / cm 3 ; Cover the dry and clean p-InGaN substrate 1 with a mask to cover 4 / 5 of the area, and then use an electron beam evaporation device to deposit an alloy thin film electrode 1 on the exposed part of...
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Abstract
The invention discloses a ZnO / InGaN heterojunction light-emitting diode and a preparation method thereof. The light-emitting diode comprises a p-InGaN substrate, a ZnO:Ga micron wire, an alloy thin film electrode is prepared on the p-InGaN substrate, and ZnO:Ga The micron wire is closely attached to the p-InGaN substrate and does not contact the alloy film electrode. The ZnO:Ga micron wire and the p-InGaN substrate form an n-ZnO:Ga / p-InGaN heterostructure, and the ZnO:Ga micron wire is far away from the One end of the alloy thin film electrode is attached with an Ag thin film electrode; the preparation method of the light emitting diode comprises the following steps: (S1) depositing the alloy thin film electrode on the p-InGaN substrate; (S2) on the side of one end of the n-ZnO:Ga micron line Deposit Ag thin-film electrodes on the top; (S3) stick the single n-ZnO:Ga micron wires coated with Ag thin-film electrodes upwards on the p-InGaN substrate to ensure that the n-ZnO:Ga micron-wires are not in contact with the alloy thin film If the electrodes are in contact, a ZnO / InGaN heterojunction light-emitting diode is obtained. The LED can emit high-efficiency and high-intensity yellow-green light.
Description
technical field [0001] The present invention relates to a light-emitting diode and a preparation method thereof, more specifically, to a ZnO / InGaN heterojunction light-emitting diode and a preparation method thereof. Background technique [0002] At present, the LED industry is developing rapidly, and full-color LED products are widely used. However, the existing green light band LEDs with a wavelength of 530nm-570nm have the problem of low luminous efficiency, which is the "Green Gap" phenomenon. The realization of color rendering index white LED and full-color display have had a great impact. The InGaN material system is widely used in blue, green and white LEDs due to its large-scale continuously adjustable band gap, high energy conversion efficiency, and long theoretical service life. Today, InGaN widely exists in the fields of signal lights, landscape lighting, and under-screen displays. However, the increase of In composition will lead to the enhancement of the quant...
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IPC IPC(8): H01L33/26H01L33/00
CPCH01L33/005H01L33/26
Inventor 姜明明唐楷阚彩侠刘洋马琨傑
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS