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Three-dimensional memory device and method of making the same

一种存储器件、三维的技术，应用在半导体器件、电固体器件、电气元件等方向，能够解决成本高昂等问题

Active Publication Date: 2021-06-08
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as memory cell feature sizes approach lower limits, planar processing and fabrication techniques become more challenging and costly
Therefore, the storage density for planar memory cells approaches the upper limit

Method used

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  • Three-dimensional memory device and method of making the same

Examples

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Embodiment Construction

[0031] While specific configurations and arrangements are discussed, it should be understood that this is done for illustrative purposes only. A person skilled in the relevant art will recognize that other configurations and arrangements may be used without departing from the spirit and scope of the present disclosure. It will be apparent to those skilled in the relevant art that the present disclosure can also be used in a variety of other applications.

[0032] Often, a term can be understood at least in part from its usage in context. For example, the term "one or more" as used herein may be used to describe a feature, structure or characteristic in the singular or may be used to describe a combination of features, structures or characteristics in the plural, depending at least in part on the context. Similarly, terms such as "a," "an," or "the" may be construed to convey singular usage or to convey plural usage, depending at least in part on context.

[0033] In general,...

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PUM

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Abstract

A method for forming a 3D memory device is provided. The method includes: forming a sacrificial layer on a substrate; forming an alternating dielectric stack on the sacrificial layer; forming a plurality of channel holes vertically passing through the alternating dielectric stack and the sacrificial layer; and forming a first channel hole in each channel hole. a channel layer. The method also includes forming a second channel layer on the first channel layer in each channel hole such that a junction of the second channel layers is higher than a bottom surface of the alternating dielectric stack. The method also includes: removing the sacrificial layer to form a horizontal trench; and forming a selective epitaxial growth layer in the horizontal trench.

Description

technical field [0001] The present disclosure relates generally to the field of semiconductor technology, and more particularly, to methods for forming three-dimensional (3D) memory devices. Background technique [0002] Planar memory cells have been shrunk to smaller sizes by improving process technology, circuit design, programming algorithms, and fabrication techniques. However, as memory cell feature sizes approach the lower limit, planar processing and fabrication techniques become more challenging and costly. Therefore, the storage density for planar memory cells approaches an upper limit. [0003] 3D memory architectures can address density limitations in planar memory cells. A 3D memory architecture includes a memory array and peripheral devices for controlling signals to and from the memory array. Contents of the invention [0004] Embodiments of a method for forming a gate structure of a 3D memory device and a fabrication method of the 3D memory device are dis...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/1157H01L27/11582
CPCH10B43/35H10B43/27H01L29/7926H10B41/27H10B41/35
Inventor 薛家倩高庭庭薛磊耿万波刘小欣黄波
Owner YANGTZE MEMORY TECH CO LTD