Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method and system for reducing over-erase phenomenon and erase time, storage medium and terminal

A technology for erasing time and storage media, applied in information storage, static memory, read-only memory, etc., can solve the problems of over-erasing and long erasing time, reduce over-erasing and avoid re-erasing , Reduce the effect of erasing time

Active Publication Date: 2020-10-16
XTX TECH INC
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The object of the present invention is to provide a method, system, storage medium and terminal for reducing over-erasing phenomenon and erasing time, aiming at solving the over-erasing phenomenon and erasing time too long problem that existing Nor flash memory exists

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and system for reducing over-erase phenomenon and erase time, storage medium and terminal
  • Method and system for reducing over-erase phenomenon and erase time, storage medium and terminal
  • Method and system for reducing over-erase phenomenon and erase time, storage medium and terminal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, not all of them. The components of the embodiments of the application generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations. Accordingly, the following detailed description of the embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of the present application.

[0035] It should ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method and a system for reducing an over-erase phenomenon and erase time, a storage medium and a terminal. The method comprises the following steps of: simultaneously selecting cells on all word lines in an area to be erased and executing erase operation; checking the word lines one by one according to a word line numbering sequence, judging whether all the cells on the current word line are successfully erased or not, and continuing to check the next word line if all the cells are successfully erased; if the cells on the currently-checked word line are not successfully erased, erasing the cells on the currently-checked word line and the cells on all the subsequent word lines together, and continuing to check the next word line until all the cells on the currently-checked word line are successfully erased. According to the method, the cells which are erased successfully can be prevented from being erased again, so that an over-erase phenomenon is reduced, wordlines which cannot be erased and word lines behind the word lines are bound together to be erased, and compared with the mode in which all the word lines are erased separately, the method has the advantage in erase time.

Description

technical field [0001] The invention relates to the field of IC design, in particular to a method, system, storage medium and terminal for reducing over-erasing phenomenon and erasing time. Background technique [0002] Nor flash memory has three main operations, the first is the read operation (Read), the second is the write operation (Program), and the third is the erase operation (Erase). [0003] The erase unit of traditional nor flash is divided into sector erase (sector erase), block erase (block erase) and chip erase (full chip erase). A sector generally consists of 4 or 8 word lines, such as figure 1 shown. A block usually consists of 8 or 16 sectors, such as figure 2 shown. The traditional block erase method is to select all word lines contained in all sectors in this block at the same time. Take a block consisting of 16 sectors as an example. During the block erase process, 4x16=64 word lines will be selected at the same time, and all selected word lines will...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/34G11C16/14
CPCG11C16/14G11C16/3477
Inventor 张柱定王振彪高益
Owner XTX TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com