Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method, system, storage medium and terminal for reducing over-erasing phenomenon and erasing time

A technology for erasing time and storage media, applied to storage media and terminals, reducing over-erasing phenomenon and erasing time method, system field, can solve the problems of over-erasing phenomenon and long erasing time, and achieve the goal of reducing over-erasing erasing phenomenon, reducing the erasing time, and avoiding the effect of erasing again

Active Publication Date: 2021-04-06
XTX TECH INC
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The object of the present invention is to provide a method, system, storage medium and terminal for reducing over-erasing phenomenon and erasing time, aiming at solving the over-erasing phenomenon and erasing time too long problem that existing Nor flash memory exists

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method, system, storage medium and terminal for reducing over-erasing phenomenon and erasing time
  • Method, system, storage medium and terminal for reducing over-erasing phenomenon and erasing time
  • Method, system, storage medium and terminal for reducing over-erasing phenomenon and erasing time

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, not all of them. The components of the embodiments of the application generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations. Accordingly, the following detailed description of the embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of the present application.

[0035] It should ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method, system, storage medium and terminal for reducing over-erasing phenomenon and erasing time. At the same time, units on all word lines in the area to be erased are selected and erased; one by one according to the order of the numbering of the word lines Check each word line to judge whether all cells on the current word line are erased successfully, and if all cells are erased successfully, continue to check the next word line; if there is a cell erased on the currently checked word line If it is unsuccessful, the erase operation will be performed on the currently checked word line and all the cells on the subsequent sequentially numbered word lines until all the cells on the currently checked word line are successfully erased and continue to the next word line inspection; this method can avoid erasing the cells that have been successfully erased, thereby reducing the occurrence of over-erasing phenomenon, and at the same time erase the word lines that cannot be erased together with the following word lines, and all The erasure ratio of a single word line will have an advantage in erasure time.

Description

technical field [0001] The invention relates to the field of IC design, in particular to a method, system, storage medium and terminal for reducing over-erasing phenomenon and erasing time. Background technique [0002] Nor flash memory has three main operations, the first is the read operation (Read), the second is the write operation (Program), and the third is the erase operation (Erase). [0003] The erase unit of traditional nor flash is divided into sector erase (sector erase), block erase (block erase) and chip erase (full chip erase). A sector generally consists of 4 or 8 word lines, such as figure 1 shown. A block usually consists of 8 or 16 sectors, such as figure 2 shown. The traditional block erase method is to select all word lines contained in all sectors in this block at the same time. Take a block consisting of 16 sectors as an example. During the block erase process, 4x16=64 word lines will be selected at the same time, and all selected word lines will...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/34G11C16/14
CPCG11C16/14G11C16/3477
Inventor 张柱定王振彪高益
Owner XTX TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com