Terahertz wave electric control modulation method based on Dirac semimetal microstructure

A modulation method and technology of terahertz waves, applied in nonlinear optics, instruments, optics, etc.

Pending Publication Date: 2020-10-20
SHANGHAI NORMAL UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] At present, terahertz modulators are far from meeting the needs of practical applications. Research and development of tunable devices with good performance (high quality factor, good tunability and large modulation depth) and simple fabrication process are very important for the further development of THz technology.

Method used

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  • Terahertz wave electric control modulation method based on Dirac semimetal microstructure
  • Terahertz wave electric control modulation method based on Dirac semimetal microstructure
  • Terahertz wave electric control modulation method based on Dirac semimetal microstructure

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Embodiment 1

[0049] Use the CST simulation software to simulate the design of the terahertz wave modulator, select the time domain solver for calculation, the calculation accuracy is -80dB, obtain the S parameters of the THz wave modulator based on the Dirac semi-metallic microstructure, and obtain the transmission spectrum line according to the S parameters , reflection lines and absorption lines, the specific formulas are as follows:

[0050] T(ω)=|S 21 (ω)| 2

[0051] R(ω)=|S 11 (ω)| 2

[0052] A(ω)=1-T(ω)-R(ω)

[0053] Among them, S 21 (ω) and S 11 (ω) are the transmission coefficient and the reflection coefficient, respectively, and T(ω), R(ω) and A(ω) are the transmission line, reflection line and absorption line, respectively.

[0054] like image 3 As shown, the structural unit of the Dirac semimetal microstructure 4 is elliptical, the semi-major axis and semi-minor axis are 40 μm and 15 μm, respectively, the period of the metamaterial structural unit is 108 μm, and the Fe...

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Abstract

The invention relates to a terahertz wave electric control modulation method based on a Dirac semimetal microstructure. The method is realized through a terahertz wave modulator based on a Dirac semimetal microstructure. The terahertz wave modulator comprises a polymer flexible substrate, an epitaxial layer, an insulating layer and a Dirac semimetal microstructure, wherein a gold thin layer and achromium thin layer are arranged on the Dirac semimetal microstructure; the chromium thin layer is arranged on the gold thin layer; the epitaxial layer is arranged on the polymer flexible substrate; the insulating layer is arranged on the epitaxial layer; the Dirac semimetal microstructure is an active region of the terahertz wave modulator and is arranged on the insulating layer; and external voltage is applied between the Dirac semimetal microstructure and the epitaxial layer to change the corresponding Fermi level so as to adjust the waveform of the resonance spectral line. Compared with the prior art, the method has the advantages that the amplitude modulation depth and the frequency modulation depth are improved, the manufacturing process is simpler, the feasibility is better, and thelike.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic materials and devices, in particular to a terahertz wave electrical control modulation method based on a Dirac semimetal microstructure. Background technique [0002] Terahertz (THz) waves are transient, low-energy, and coherent. In recent years, they have shown unique advantages and broad prospects in many fields such as astronomical observation, wireless high-speed and ultra-wideband communication, and public safety detection. For example, terahertz wave communication has the advantages of good frequency bandwidth, confidentiality and fast transmission speed. It is suitable for high-speed wireless communication, and the transmission rate can reach 1-10Gb / s. Realizing the effective manipulation of THz wave characteristics (such as frequency, amplitude, phase and polarization direction) is very important and necessary to promote the further development of THz technology, and i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/017
CPCG02F1/017
Inventor 何晓勇
Owner SHANGHAI NORMAL UNIVERSITY
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