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Bulk acoustic wave resonator

A technology of bulk acoustic wave resonators and resonance parts, which is applied to electrical components, impedance networks, etc., and can solve problems such as increased losses

Pending Publication Date: 2021-01-05
SAMSUNG ELECTRO MECHANICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, when the frequency increases, the loss occurring in the piezoelectric layer or the resonance part may increase

Method used

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Embodiment Construction

[0041] The following detailed description is provided to assist the reader in gaining an overall understanding of the methods, devices and / or systems described herein. However, various alterations, modifications and equivalents of the methods, apparatus and / or systems described herein will be apparent after understanding the disclosure of the present application. For example, the order of operations described herein is an example only and is not limited to the order set forth herein, but, except for operations that must occur in a particular order, can be made that will be apparent after understanding the disclosure of this application. change. Furthermore, descriptions of features known in the art may be omitted for increased clarity and conciseness.

[0042] The features described herein may be implemented in different forms and should not be construed as limited to the examples described herein. Rather, the examples described herein have been provided merely to illustrate...

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Abstract

The present disclosure provides a bulk acoustic wave resonator. The bulk acoustic wave resonator may include: a substrate; a resonance part, comprising a first electrode, a piezoelectric layer and a second electrode, and the first electrode being arranged on the substrate, the piezoelectric layer being arranged on the first electrode, and the second electrode being arranged on the piezoelectric layer; and a seed layer arranged at a lower portion of the first electrode. The seed layer may be formed using titanium (Ti) having a close packed hexagonal (HCP) structure or an alloy of Ti having theHCP structure. The seed layer may have a thickness greater than or equal to and less than or equal to, or may be thinner than the first electrode.

Description

[0001] This application claims the benefit of priority of Korean Patent Application No. 10-2019-0080123 filed with the Korean Intellectual Property Office on July 3, 2019, the entire disclosure of which is incorporated by reference for all purposes at this. technical field [0002] The following description relates to a bulk acoustic wave resonator. Background technique [0003] According to the miniaturization trend of wireless communication devices, technology for miniaturizing high-frequency components is required. For example, bulk acoustic wave (BAW) type filters using semiconductor thin film wafer fabrication technology are available. [0004] A BAW resonator is a thin-film device in which piezoelectric dielectric material is deposited on a silicon wafer, which is a semiconductor substrate. The BAW resonator is implemented as a filter by causing resonance by utilizing the piezoelectric characteristics of the BAW resonator. [0005] Recently, technical attention for ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/02H03H9/17H03H9/02
CPCH03H3/02H03H9/171H03H9/174H03H9/02086H03H9/02H03H2003/023H03H2003/028H03H2003/0421H03H2003/0428H03H2009/02173H03H9/131H03H9/173H03H9/02015
Inventor 李泰京申兰姬孙晋淑庆济弘
Owner SAMSUNG ELECTRO MECHANICS CO LTD
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