Wavelength-selectable photoelectric detector and system

A photodetector and wavelength technology, applied in the field of photodetectors, can solve the problems of non-selectivity of optical radiation wavelength and low detection rate of optical signals, and achieve the effect of improving sensitivity and photon transmission rate

Inactive Publication Date: 2021-01-12
金华伏安光电科技有限公司
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a wavelength-selectable photodetector and system to solve the problem of optical signal detection in the near-infrared band when the photodetector is working in the prior art. The problem of low efficiency and non-selectivity of the wavelength of optical radiation

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  • Wavelength-selectable photoelectric detector and system

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Embodiment Construction

[0023] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is an embodiment of the present invention, but not all embodiments. The components of the embodiments of the invention generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations.

[0024] Accordingly, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without cr...

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Abstract

The invention relates to a wavelength-selectable photoelectric detector and system, and mainly relates to the technical field of photoelectric detectors. The wavelength-selectable photoelectric detector provided by the invention comprises a substrate, a perovskite layer, a thermal expansion material, a transmission layer, a noble metal layer, a first electrode and a second electrode. Since the taper hole of the perovskite layer is filled with the thermal expansion material, the cross sectional area of the taper hole of the perovskite layer can be changed by adjusting the measurement temperature of the detector, namely, the selection of the detector provided by the invention for the resonance wavelength can be changed, so that the regulation and control of the taper hole are realized, and the detection wavelength range of the detector is changed. Furthermore, due to the existence of the conical hole, more energy can be gathered in the perovskite layer and the precious metal layer basedon the tip effect, so that the photon transmission rate of the detector is improved, and the photon detection sensitivity of the detector is improved.

Description

technical field [0001] The invention relates to the technical field of photodetectors, and mainly relates to a photodetector and a system with selectable wavelengths. Background technique [0002] Photodetectors are widely used in various fields of military and national economy. In the visible or near-infrared band, it is mainly used for biosensing, radiation measurement and detection, industrial automatic control, photometry, etc. Photodetectors convert light signals into electrical signals. [0003] Depending on the way the device responds to radiation or the mechanism of the device's work, photodetectors can be divided into two categories: one is photon detectors; the other is thermal detectors. Photon detectors have a selectivity for the wavelength of light radiation, but the detection rate of light signals in the near-infrared band is low; thermal detectors are based on the temperature rise of the material after absorbing the energy of light radiation, thus changing i...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44
CPCH10K30/10H10K30/80Y02E10/549
Inventor 不公告发明人
Owner 金华伏安光电科技有限公司
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