3d NAND flash programming method

Abstract

The present invention provides a 3D NAND flash memory programming method, comprising: S1) providing a 3D NAND flash memory array to remove residual charges; S2) gating the bit line where the upper sub-memory module is located; S3) applying drain voltage, and the source is floating; S4) apply programming voltage on the gate of the memory cell to be programmed, and complete the programming; S5) after completing the programming of the upper sub-memory module, keep the programming state in the upper sub-memory module In other cases, step S3) and step S4) are repeated by selecting the bit line where the lower sub-memory module is located to realize the programming of the lower sub-memory module. The 3D NAND flash memory programming method of the present invention completes programming based on the principle of three electron collisions, the gate voltage during programming is much lower than that of the existing tunneling (F-N) programming method, and the programming time is short, which can effectively reduce power consumption. consumption and avoid interference between adjacent memory cells, improving programming efficiency.

Description

technical field [0001] The invention relates to the field of integrated circuit design, in particular to a 3D NAND flash memory programming method. Background technique [0002] With the development of planar flash memory, the production process of semiconductors has made great progress. However, in recent years, the development of planar flash memory has encountered various challenges: physical limits, existing development technology limits, and storage electron density limits. In this context, various three-dimensional (3D) flash memory structures have emerged, such as 3D NOR flash memory and 3D NAND flash memory, in order to solve the difficulties encountered in planar flash memory and pursue lower production costs per unit storage unit. [0003] In 3D NAND flash memory, memory cells are arranged in series between the bit line and the ground line. The NAND flash memory with a serial structure has a lower reading speed, but a faster writing speed and erasing speed, so th...

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Problems solved by technology

[0009] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a 3D NAND flash memory programming method, which is used to solve the problems of high programming voltage, high power consumption of flash memory, and interference between adjacent memory cells in the prior art.

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