Unlock instant, AI-driven research and patent intelligence for your innovation.

OPC correction method and OPC correction device

A technology of origin and segment, which is applied in the field of OPC correction method and OPC correction device, can solve the problems of cumbersome OPC correction operation and long correction time, and achieve the effect of improving lithography efficiency, improving efficiency and saving time

Active Publication Date: 2022-04-12
CHANGXIN MEMORY TECH INC
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides an OPC correction method and an OPC correction device, which are used to solve the problems of cumbersome OPC correction operations and long correction time in order to improve the efficiency of semiconductor lithography

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • OPC correction method and OPC correction device
  • OPC correction method and OPC correction device
  • OPC correction method and OPC correction device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0050] The specific implementations of the OPC correction method and the OPC correction device provided by the present invention will be described in detail below in conjunction with the accompanying drawings.

[0051] This specific embodiment provides an OPC correction method, with figure 1 It is a flow chart of the OPC correction method in the specific embodiment of the present invention, with figure 2 It is a flow chart of the cycle steps in the specific embodiment of the present invention, with Figures 3A-3E It is a schematic diagram of the OPC correction process in the specific implementation manner of the present invention. Such as figure 1 , figure 2 , Figure 3A-Figure 3E As shown, the OPC correction method provided in this specific embodiment includes the following steps:

[0052] Step S11 , dividing the edge of a mask pattern to form a plurality of segments.

[0053] In order to simplify the segmentation operation of the mask pattern and further improve the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an OPC correction method and an OPC correction device. The OPC correction method comprises the steps of: segmenting the edge of a mask pattern to form a plurality of segments; obtaining the origin in each of the segments according to a preset rule; performing multiple loop steps on each of the origins respectively , to obtain multiple overlapping areas corresponding to each of the origins; group the multiple origins according to the matching degree of the overlapping areas between the origins; use the same compensation value to correct the segments where the origins are located in the same group ; The looping step includes: extending a preset distance from the origin to form an evaluation pattern symmetrical to the center of the origin; obtaining an overlapping area between the evaluation pattern and the mask pattern, and using the Evaluate the graph as a whole as the origin for the next iteration. The invention greatly improves the efficiency of OPC correction and saves the time of OPC correction.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an OPC correction method and an OPC correction device. Background technique [0002] During the semiconductor lithography process, due to the diffraction effect of ultraviolet light, when the pattern on the mask pattern is projected onto the wafer, the pattern formed on the wafer surface is often distorted. This phenomenon is called the optical proximity effect ( Optical Proximity Effect, OPE). The pattern distortion on the wafer surface caused by the optical proximity effect is mainly manifested as the shift of the critical dimension (CD) of the line width, the shortening of the end of the line (End Of Line, EOL), and the pattern missing or bridging (Missed Patterns Or Bridging) , corner rounding (Corner Rounding) and other features. [0003] Appropriate modification of the mask pattern to compensate for the defects caused by the optical proximity effect, s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G03F1/36
CPCG03F7/70441G03F1/36
Inventor 不公告发明人
Owner CHANGXIN MEMORY TECH INC