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Light-emitting device and display apparatus

A technology of light-emitting elements and light-emitting layers, which is applied in the direction of electrical components, identification devices, semiconductor devices, etc., and can solve problems affecting manufacturing yield, cracking, small die size and thickness, etc.

Active Publication Date: 2021-02-26
IND TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because the die size and thickness of micron-level LED chips are very small, micron-level light-emitting diode chips often face the problem of cracking under force during batch transfer to the driver backplane, which affects the manufacturing yield.

Method used

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  • Light-emitting device and display apparatus
  • Light-emitting device and display apparatus
  • Light-emitting device and display apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0070] Figure 1 to Figure 8 is a schematic cross-sectional view of the manufacturing process of the light-emitting element according to the first embodiment of the present invention, and Figure 9 yes Figure 8 A schematic top view of the light-emitting element in . Please refer to figure 1, firstly, a substrate 100 is provided. Next, a first-type doped semiconductor layer 110a, a light-emitting layer 110b, and a second-type doped semiconductor layer 110c are sequentially formed on the surface of the substrate 100 through an epitaxial manufacturing process, wherein the first-type doped semiconductor layer 110a is located on the substrate 100 On the surface of , the light-emitting layer 110b is located on the first-type doped semiconductor layer 110a, and the second-type doped semiconductor layer 110c is located on the light-emitting layer 110b. The aforementioned first-type doped semiconductor layer 110 a , light-emitting layer 110 b and second-type doped semiconductor la...

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Abstract

The invention discloses a light-emitting device and a display device, and the light-emitting device includes an epitaxial layer, a support layer, an insulating layer, a first electrode pad, and a second electrode pad. The epitaxial layer includes a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer, wherein the light-emitting layer is disposedon a partial area of the first type doped semiconductor layer and is between the first type doped semiconductor layer and the second type doped semiconductor layer. The support layer covers the secondtype doped semiconductor layer while the insulating layer covers the epitaxial layer and the support layer. The first and the second electrode pads are disposed over the insulating layer and electrically connected to the first and the second type doped semiconductor layers, respectively. The support layer extends from a first position below the first electrode pad to a second position below the second electrode pad.

Description

technical field [0001] The invention relates to an electronic component, and in particular to a light emitting component and a display device. Background technique [0002] With the increasing progress of the manufacturing technology of light-emitting diode chips, a light-emitting diode display technology using light-emitting diode chips as sub-pixels has been developed. In the manufacturing process of manufacturing the light emitting diode display device, it is necessary to weld the light emitting diode chips distributed in an array to the driving backplane. At present, using micron-level light-emitting diode chips as display sub-pixels has gradually become the mainstream of light-emitting diode display devices. Since the die size and thickness of the micron-level LED chips are very small, the micron-level light-emitting diode chips often face the problem of cracking due to force during batch transfer to the driving backplane, thereby affecting the manufacturing yield. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/44H01L33/02H01L33/38G09F9/33
CPCH01L33/44H01L33/02H01L33/382G09F9/33
Inventor 郭义德吴明宪林奕辰蔡曜骏方彦翔
Owner IND TECH RES INST