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Scribing lane structure suitable for laser stealth dicing and preparation method thereof

A technology of invisible cutting and dicing lanes, which is applied in the process of producing decorative surface effects, nanotechnology for materials and surface science, microstructure technology, etc., can solve problems affecting wafer dicing, etc., and achieve process compatibility , reduce the effect of reflection

Active Publication Date: 2021-12-24
JIANGSU HINOVAIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, the dicing lane will be covered by the metal layer, which will affect the dicing of the wafer

Method used

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  • Scribing lane structure suitable for laser stealth dicing and preparation method thereof
  • Scribing lane structure suitable for laser stealth dicing and preparation method thereof
  • Scribing lane structure suitable for laser stealth dicing and preparation method thereof

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Embodiment Construction

[0026] The present invention will be further described below in conjunction with specific drawings and embodiments.

[0027] Such as figure 1 with image 3 As shown: In order to effectively ensure the use of laser stealth cutting on the scribe line, the present invention includes a substrate 1, a device body 2 prepared on the substrate 1, and a scribe line 3 arranged on the outer circumference of the device body 2,

[0028] It also includes a metal layer support arranged on the scribing road 3. When the metal layer is deposited on the device body 2, the metal on the scribing road 3 is supported by the metal layer support, and a non-conductive layer can be formed on the metal layer support. The continuous scribe lane metal layer 7 forms a scribe lane low reflector capable of reducing metal reflectivity through the metal layer support and the scribe lane metal layer 7 on the metal layer support.

[0029] Specifically, the substrate 1 can be in a commonly used form, and the req...

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Abstract

The invention relates to a scribing lane structure suitable for laser stealth cutting and a preparation method thereof. It includes a substrate, a device body prepared on the substrate, and a scribing road arranged on the outer periphery of the device, and a metal layer support body arranged on the scribing road. When depositing a metal layer on the device body, pass The metal layer support supports the metal on the scribe lane, and can form a discontinuous scribe lane metal layer on the metal layer support, formed by the metal layer support and the scribe lane metal layer on the metal layer support Scribe low reflector that can reduce metal reflectivity. The present invention can form a scribing road low reflection body on the scribing road when metal deposition is performed on the device body. , It can also reduce the reflection of the laser, so as to effectively ensure the use of laser stealth cutting for the scribing line, which is compatible with the existing process.

Description

technical field [0001] The invention relates to a scribing lane structure and a preparation method thereof, in particular to a scribing lane structure suitable for laser stealth cutting and a preparation method thereof. Background technique [0002] MEMS devices often contain complex and fragile mechanical structures such as cantilever beams, suspended films, cavities, microneedles, and microsprings. These micromechanical structures are easily damaged by mechanical contact and contaminated by exposure. The mechanical strength they can withstand Much smaller than conventional IC chips. [0003] Based on the above characteristics, the wafer dicing of the above-mentioned MEMS devices cannot be diced by a grinding wheel, because of the pressure and torque generated by the high-speed rotation of the grinding wheel blade, and the grinding wheel scribing often needs to be cooled and rinsed with pure water, and the rinsing of pure water will also The impact force is generated, and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B7/02B81C1/00B82Y30/00
CPCB81B7/02B81C1/00015B82Y30/00
Inventor 石梦张琛琛毛海央周娜
Owner JIANGSU HINOVAIC TECH CO LTD