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Wafer curvature adjusting method

An adjustment method and bending technology, which is applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc., can solve different adjustment problems

Active Publication Date: 2021-04-20
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, in the related art, when adjusting the curvature of the wafer, the curvature of the wafer can only be adjusted as a whole, and different targeted adjustments cannot be made for different situations in different local areas.

Method used

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Embodiment Construction

[0043] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the specific technical solutions of the invention will be further described in detail below in conjunction with the drawings in the embodiments of the present invention.

[0044] In each embodiment of the present invention, a first material layer is formed on the surface of the provided wafer to be processed, and the first The oxidation rate of the material layer forms a second material layer with different local thicknesses, so as to achieve targeted adjustment of wafer curvature.

[0045] An embodiment of the present invention provides a method for adjusting wafer curvature, figure 1 It is a schematic flow chart of implementing the method for adjusting the curvature of the wafer in the present invention. Such as figure 1 As shown, the method includes the following steps:

[0046] Step 101: providing a wafer to be processed; wherein, the degree of...

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Abstract

The invention provides a wafer curvature adjusting method. The wafer curvature adjusting method comprises the steps: providing a wafer to be processed, the bending degree of the to-be-processed wafer in the first area being different from the bending degrees of the to-be-processed wafer in other regions; forming a first material layer on the wafer to be processed; at least carrying out ion implantation processing on the part, corresponding to the first region, of the first material layer; and after the ion implantation processing, carrying out oxidation processing on the first material layer so as to form a second material layer with different thickness distribution corresponding to the first region and other regions on the surface of the wafer to be processed.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a wafer curvature adjustment method. Background technique [0002] In the semiconductor manufacturing process, it is necessary to perform multi-layer thin film deposition processing on a wafer and perform etching processing on the deposited multi-layer thin film. These processes will cause the wafer to bend, and the excessive curvature of the wafer (expressed as bow in English) will cause a series of problems, such as the peeling off of the stacked film on the wafer surface, wafer cracking, and unstable layout alignment performance. The subsequent process sucker cannot hold the wafer, etc., and cannot complete the subsequent process, which will eventually lead to unstable performance of the formed semiconductor product, and even reduce the output rate and yield of the semiconductor product. Therefore, controlling the wafer bow within a reasonable range has huge economic b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L27/11524H01L27/11556H01L27/1157H01L27/11582H10B41/27H10B41/35H10B43/27H10B43/35
Inventor 刘修忠艾义明颜元於成星沈保家刘小辉
Owner YANGTZE MEMORY TECH CO LTD