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A method for adjusting wafer curvature

An adjustment method and technology of bending degree, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as different adjustments

Active Publication Date: 2022-05-24
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, in the related art, when adjusting the curvature of the wafer, the curvature of the wafer can only be adjusted as a whole, and different targeted adjustments cannot be made for different situations in different local areas.

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  • A method for adjusting wafer curvature
  • A method for adjusting wafer curvature
  • A method for adjusting wafer curvature

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Embodiment Construction

[0043] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the specific technical solutions of the invention will be described in further detail below with reference to the accompanying drawings in the embodiments of the present invention.

[0044] In various embodiments of the present invention, a first material layer is formed on the surface of the provided wafer to be processed, and the first material layer is changed by ion implanting at least a part of the first material layer corresponding to the first region. The oxidation rate of the material layer forms a second material layer with different local thicknesses, so as to realize the targeted adjustment of the wafer curvature.

[0045] Embodiments of the present invention provide a method for adjusting the curvature of a wafer, figure 1 It is a schematic flow chart of a method for adjusting the curvature of a wafer in accordance with the present invention. like...

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Abstract

The present invention provides a wafer curvature adjustment method, comprising: providing a wafer to be processed; wherein, the degree of curvature of the wafer to be processed in a first region is different from the degree of curvature in other regions of the wafer to be processed; forming a first material layer on the wafer to be processed; performing ion implantation treatment on at least a part of the first material layer corresponding to the first region; after the ion implantation treatment, performing oxidation treatment on the first material layer, A second material layer having a different thickness distribution corresponding to the first region and other regions is formed on the surface of the wafer to be processed.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and in particular, to a method for adjusting the curvature of a wafer. Background technique [0002] In the manufacturing process of semiconductors, it is necessary to perform a multi-layer thin film deposition process on a wafer and an etching process for the deposited multi-layer thin film. These processes will cause the wafer to bend, and the excessive wafer bend (bow in English) will cause a series of problems, such as peeling off of the stacked layer film on the wafer surface, wafer cracking, and unstable layout alignment performance. In the subsequent process, the suction cup cannot hold the wafer, etc., and the subsequent process cannot be completed, which will eventually lead to unstable performance of the formed semiconductor product, and even reduce the output rate and yield of the semiconductor product. Therefore, controlling the wafer curvature within a reasonable range has hu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L27/11524H01L27/11556H01L27/1157H01L27/11582H10B41/27H10B41/35H10B43/27H10B43/35
Inventor 刘修忠艾义明颜元於成星沈保家刘小辉
Owner YANGTZE MEMORY TECH CO LTD