Phase change memory and manufacturing method thereof

Abstract

The embodiment of the invention discloses a phase change memory and a manufacturing method thereof. The phase change memory comprises: a phase change memory array which is located on a substrate and comprises a first conductive wire, a memory lamination layer and a second conductive wire which are arranged in a direction perpendicular to the substrate, wherein the first conductive wire and the second conductive wire are parallel to the substrate and are perpendicular to each other, and the memory lamination layer is perpendicular to the first conductive wire and the second conductive wire; a capacitor array, wherein the capacitor array and the phase change storage array are arranged on the substrate in parallel in the direction parallel to the substrate, the capacitor array comprises first electrode plates and second electrode plates which are alternately arranged in parallel in the direction parallel to the substrate, each of the first electrode plates and the second electrode plates comprises the first conductive wire, or the second conductive line, the first electrode plates are electrically connected with the phase change storage array, and the second electrode plates are electrically connected with a grounding end; and an electrically insulating isolation structure located between the first electrode plates and the second electrode plates.

Description

technical field [0001] Embodiments of the present disclosure relate to the field of integrated circuits, and in particular to a phase-change memory and a manufacturing method thereof. Background technique [0002] Phase Change Memory (Phase Change Memory, PCM), as an emerging non-volatile memory device, has the advantages of high speed and long life of Dynamic Random Access Memory (DRAM), and flash memory (Flash Memory) has the advantages of low cost and non-volatility, and can be widely used in electronic devices such as mobile phones. [0003] In related technologies, the resistance state of the phase-change storage layer can be changed by supplying power to the phase-change storage layer (for example, applying voltage or current), so as to realize data storage. However, as the bit density and integration level of the phase change memory increase, the power supply stability of the phase change memory is poor. Contents of the invention [0004] In view of this, embodime...

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Problems solved by technology

However, as the bit density and integration of phase change memory i

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