Supercharge Your Innovation With Domain-Expert AI Agents!

Phase change memory and manufacturing method thereof

A phase change memory, phase change storage technology, applied in static memory, digital memory information, information storage and other directions, can solve the problems of poor power supply stability of phase change memory, improve power supply stability, reduce process costs, and reduce process steps Effect

Active Publication Date: 2021-11-09
YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the bit density and integration of phase change memory increase, the stability of power supply of phase change memory is poor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Phase change memory and manufacturing method thereof
  • Phase change memory and manufacturing method thereof
  • Phase change memory and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0051] The technical solution of the present disclosure will be further elaborated below in conjunction with the drawings and embodiments. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0052] In the following paragraphs the invention is described more specifically by way of example with reference to the accompanying drawings. The advantages and features of the present disclosure will be more apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use inaccurate scales, which are only used to facilitate and clearly assist the purpose of illustrat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the present disclosure discloses a phase-change memory and a manufacturing method thereof. The phase-change memory includes: a phase-change memory array located on a substrate, including a first conductive line arranged along a direction perpendicular to the substrate, and a storage stack and the second conductive line; the first conductive line and the second conductive line are parallel to the substrate and perpendicular to each other, and the storage stack is perpendicular to the first conductive line and the second conductive line; the capacitor array, along the direction parallel to the substrate, and The phase-change memory array is arranged side by side on the substrate, including: first electrode plates and second electrode plates alternately arranged side by side along a direction parallel to the substrate, each of which includes: the first conductive wire; or, the The second conductive wire; the first electrode plate is electrically connected to the phase change memory array; the second electrode plate is electrically connected to the ground terminal; an electrically insulating isolation structure is located between the first electrode plate and between the second electrode plates.

Description

technical field [0001] Embodiments of the present disclosure relate to the field of integrated circuits, and in particular to a phase-change memory and a manufacturing method thereof. Background technique [0002] Phase Change Memory (Phase Change Memory, PCM), as an emerging non-volatile memory device, has the advantages of high speed and long life of Dynamic Random Access Memory (DRAM), and flash memory (Flash Memory) has the advantages of low cost and non-volatility, and can be widely used in electronic devices such as mobile phones. [0003] In related technologies, the resistance state of the phase-change storage layer can be changed by supplying power to the phase-change storage layer (for example, applying voltage or current), so as to realize data storage. However, as the bit density and integration level of the phase change memory increase, the power supply stability of the phase change memory is poor. Contents of the invention [0004] In view of this, embodime...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/24H01L45/00H01L49/02G11C13/00H10N97/00
CPCH01L28/60G11C13/0004H10B63/80H10B63/84H10N70/231H10N70/011
Inventor 刘峻
Owner YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com