Manufacturing method of light emitting device

Abstract

The invention relates to a light emitting device and a manufacturing method thereof. The manufacturing method includes the following steps: providing a substrate with an epitaxial structure on the surface, the epitaxial structure has a first semiconductor layer, an active layer and a second semiconductor layer stacked on the substrate in sequence; forming an electrode hole on the epitaxial structure, the electrode hole Pass through the second semiconductor layer and the active layer; sequentially form a sacrificial layer and a passivation layer on the epitaxial structure, the sacrificial layer covers the first surface of the second semiconductor layer away from the substrate, and the passivation layer covers the sacrificial layer and the electrode hole The inner surface of the inner surface; remove the passivation layer on the first surface, the passivation layer on the bottom surface of the electrode hole and the sacrificial layer, and keep the passivation layer on the side surface of the electrode hole; form the first electrode and the second electrode on the first surface side , the first electrode is electrically connected to the second semiconductor layer, and the second electrode is electrically connected to the first semiconductor layer through the electrode hole. The above-mentioned manufacturing method avoids the etching difficulty caused by the small photolithography process window of the electrode hole, and is beneficial to the miniaturization of the chip size.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light emitting device and a manufacturing method thereof. Background technique [0002] Because light-emitting diodes have the advantages of energy saving, environmental protection, and long life, in the next few years, light-emitting diodes may replace traditional lighting fixtures such as incandescent lamps and fluorescent lamps and enter thousands of households. Among them, micro light-emitting diodes are a new type of display technology, which has the advantages of high brightness, low delay, long life, wide viewing angle, and high contrast, and is the current development direction of light-emitting diodes. [0003] At present, in the process of manufacturing micro-light-emitting elements, the etching of the passivation layer directly determines the minimum size of the light-emitting semiconductor miniaturization. Generally, positive photoresist is used for photolith...

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Problems solved by technology

[0004] In view of the above deficiencies in the prior art, the purpose of this application is to provide a light-emitting device and its manufacturing method, aiming at solving the difficulty in miniaturization of the chip size due to the small photolithography process window and the difficulty of etching in the prior art. The problem

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