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Solid-state imaging device and imaging device
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A technology of solid-state imaging devices and generating units, which is applied in the direction of electric solid-state devices, semiconductor devices, radiation control devices, etc., and can solve problems such as difficulty in meeting the needs of higher-speed processing
Pending Publication Date: 2021-06-15
SONY SEMICON SOLUTIONS CORP
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Abstract
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Problems solved by technology
Under such circumstances, it is difficult to meet the demand for higher-speed processing in fields related to transportation, robotics, etc.
Method used
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no. 1 example
[0079] 2.1 Configuration Example of Imaging Device
[0080] 2.2 Configuration example of solid-state imaging device
[0081] 2.2.1 Example of a stacked structure of a solid-state imaging device
[0082] 2.2.2 Examples of functional configuration of solid-state imaging devices
[0083] 2.3 Configuration example of unit pixel
[0084] 2.4 Configuration Example of Address Event Detection Unit
[0085] 2.4.1 Configuration example of current-voltage conversion unit
[0086] 2.4.2 Configuration Example of Subtractor and Quantizer
[0087] 2.5 Settings of each layer
[0088] 2.6 Examples of cross-sectional structures of solid-state imaging devices
[0096] 3.1 Improvement of noise characteristics of transistors
[0097] 3.1.1 Using FDSOI (Fully Depleted Silicon On Insulator)
[0098] 3.1.2 Use of Tunnel FETs and Fin FETs
[0099] 3.2 Operation and effect
[0100] 4. The third embodiment
[0101] 4.1 Manufacturing process of solid-state imaging device
[0102] 4.2 Operation and effect
no. 4 example
[0104] 5.1 Configuration example of unit pixel
[0105] 5.2 Examples of cross-sectional structures of solid-state imaging devices
[0106] 5.3 Layer diagram example
[0107] 5.4 Operation and effect
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Abstract
The purpose of the present invention is to improve noise performance. A solid-state imaging device according to an embodiment of the present invention comprises: a plurality of photoelectric conversion elements (333) that are arranged in a two-dimensional lattice in row and column directions and respectively produce charge according to amounts of light received; and a detection unit (400) that detects photoelectric current based on the charge produced in the plurality of photoelectric conversion elements. The photoelectric conversion elements and at least a part of the detection unit are disposed in different chips (201a, 201b).
Description
technical field [0001] The present disclosure relates to a solid-state imaging device and an imaging device. Background technique [0002] Conventional imaging devices and the like include a synchronous type solid-state imaging device that captures image data (frames) in synchronization with a synchronous signal (for example, a vertical synchronous signal). Such a typical synchronous type solid-state imaging device is allowed to acquire image data only once per period (for example, 1 / 60 second) of the synchronous signal. Under such circumstances, it is difficult to meet demands for higher-speed processing in fields related to transportation, robots, and the like. Therefore, there has been proposed an asynchronous type solid-state imaging device including a detection circuit provided for each pixel to detect in real time that the amount of received light exceeds a threshold value as an address event. An asynchronous type solid-state imaging device that detects an address ev...
Claims
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Application Information
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