Asynchronous RAM read-write method and device, terminal equipment and readable storage medium
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- SHENZHEN YSPRING TECH
- Publication Date
- 2021-06-18
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Abstract
Description
technical field
[0001] The invention relates to the field of memory, in particular to an asynchronous RAM reading and writing method, device, terminal equipment and readable storage medium. Background technique
[0002] According to different sampling clocks, random access memory (Random Access Memory, RAM) can be divided into synchronous RAM and asynchronous RAM. Synchronous RAM means that the same clock is used for reading and writing. For RAM, since the frequency of the write clock is different from that of the read clock, it may cause conflicts between reading and writing of RAM data, thereby affecting effective writing and reading of RAM data. Contents of the invention
[0003] In view of the above problems, the present application proposes an asynchronous RAM reading and writing method, device, terminal equipment and readable storage medium.
[0004] The present application proposes an asynchronous RAM reading and writing method, the method comprising:
[0005] Obt...