Check patentability & draft patents in minutes with Patsnap Eureka AI!

Semiconductor structure manufacturing method and semiconductor structure

A manufacturing method and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve the problems of electromagnetic induction and affect the normal operation of the chip, and achieve the effect of improving the performance of the chip

Active Publication Date: 2022-05-20
CHANGXIN MEMORY TECH INC
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing protection structure is easy to generate electromagnetic induction when the chip is running, which in turn affects the normal operation of the chip

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor structure manufacturing method and semiconductor structure
  • Semiconductor structure manufacturing method and semiconductor structure
  • Semiconductor structure manufacturing method and semiconductor structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] Typical embodiments embodying the features and advantages of the present invention will be described in detail in the following description. It should be understood that the present invention can have various changes in different embodiments without departing from the scope of the present invention, and that the description and drawings therein are illustrative in nature and not intended to limit the present invention. invention.

[0027] In the following description of various exemplary embodiments of the invention, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of example different exemplary structures, systems, and embodiments in which aspects of the invention may be implemented and steps. It is to be understood that other specific arrangements of components, structures, exemplary devices, systems and steps may be utilized and structural and functional modifications may be made without departing from the scope...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a method for manufacturing a semiconductor structure and a semiconductor structure. The method for manufacturing a semiconductor structure includes: providing a substrate in which a first protection structure is formed; forming a first dielectric layer on the substrate; A second protection structure is formed in the first dielectric layer and the substrate; wherein, the projection of the second protection structure and the projection of the first protection structure in a direction perpendicular to the surface of the substrate at least partially overlaps, the There is a distance between the second protection structure and the projection of the first protection structure along the direction of the substrate surface. The semiconductor structure and manufacturing method proposed by the present invention can reduce the electromagnetic induction generated in the protection structure when the chip is running through the segmented protection structure, thereby weakening the interference to the normal operation of the chip and improving the performance of the chip.

Description

technical field [0001] The invention relates to the technical field of semiconductor preparation technology, in particular to a method for manufacturing a semiconductor structure and the semiconductor structure. Background technique [0002] During the chip manufacturing process, a protective structure needs to be provided on the periphery of the chip to prevent damage to the inside of the chip when the wafer is cut. However, the existing protection structure is prone to generate electromagnetic induction when the chip is running, thereby affecting the normal operation of the chip. Contents of the invention [0003] The invention provides a method for manufacturing a semiconductor structure capable of improving chip performance and the semiconductor structure. [0004] To achieve the above object, the present invention adopts the following technical solutions: [0005] According to one aspect of the present invention, a method for fabricating a semiconductor structure is...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/552
CPCH01L23/552
Inventor 王蒙蒙黄信斌张强
Owner CHANGXIN MEMORY TECH INC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com