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Magnetic tunnel junction element and magnetic memory using it

A magnetic tunnel junction element and storage layer technology, which is applied in static memory, digital memory information, and magnetic field controlled resistors, etc., can solve the problems of impracticality, low magnetic coercive force and insulating magnetic layer, and achieve the reduction of electromagnetic induction, Effect of External Leakage Magnetic Field Stabilization

Inactive Publication Date: 2005-08-10
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, insulating magnetic layers whose coercive force is low enough to realize a closed magnetic circuit structure are difficult to form with existing technologies
Therefore, it is impractical

Method used

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  • Magnetic tunnel junction element and magnetic memory using it
  • Magnetic tunnel junction element and magnetic memory using it
  • Magnetic tunnel junction element and magnetic memory using it

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] figure 1 An example of the structure of the MTJ element according to the present invention is shown.

[0053] like figure 1 As shown, the MTJ element 1 in Embodiment 1 of the present invention has an antiferromagnetic layer 11, a ferromagnetic layer 12, an insulating layer 13, a ferromagnetic layer 14 as a storage layer, a nonmagnetic layer 10, and a closed magnetic circuit forming layer. (ferromagnetic layer) 15 . The ferromagnetic layer 14 and the closed magnetic circuit forming layer (ferromagnetic layer) 15 are directly connected to each other at their respective end portions, but their central portions are separated or separated from each other by a gap G between them. The slit G is filled with a nonmagnetic layer (an insulating layer in this example) 10 .

[0054] like figure 1 As shown, by placing the closed magnetic path forming layer (ferromagnetic layer) 15 on the ferromagnetic layer 14, the magnetic induction of the ferromagnetic layer 14 and the close...

Embodiment 2

[0070] Image 6 The structure of the MTJ element 2 in Example 2 according to the present invention is shown.

[0071] exist Image 6 The MTJ elements in the figure 1 An insulating layer 16, a ferromagnetic layer 17 and an antiferromagnetic layer 18 are further provided on the closed magnetic circuit forming layer 15 of the MTJ element. That is to say, in Image 6 Among them, the MTJ element 2 has an antiferromagnetic layer 11, a ferromagnetic layer 12, an insulating layer 13, a ferromagnetic layer 14 as a storage layer, a non-ferromagnetic layer 10, a closed magnetic circuit forming layer (ferromagnetic layer) 15, an insulating layer 16. Ferromagnetic layer 17 and antiferromagnetic layer 18. End portions of the ferromagnetic layer 14 and the closed magnetic circuit forming layer (ferromagnetic layer) 15 are all connected to each other, but their central portions are separated or separated from each other to form a slit G therebetween. The slit G is filled with a nonmagne...

Embodiment 3

[0095] Figure 11 The structure of the MTJ element in Example 3 is shown.

[0096] exist Figure 11 Among them, the MTJ element 3 mainly consists of an antiferromagnetic layer 21, a ferromagnetic layer 22, an insulating layer 23, a ferromagnetic layer 24 as a storage layer, a closed magnetic circuit formation layer (ferromagnetic layer) 25, a nonmagnetic layer 20, an insulating layer 26. The ferromagnetic layer 27 and the antiferromagnetic layer 28 are composed. The ferromagnetic layer 24 and the closed magnetic circuit forming layer (ferromagnetic layer) 25 are directly connected to each other at their respective end portions, but are separated or separated from each other at the central portion so as to form the slit G as the previous example therebetween. The slit G is filled with a non-ferromagnetic layer 20 (in this case an insulating layer).

[0097] as if Figure 11 The manner shown places a closed magnetic circuit forming layer (ferromagnetic layer) 25 on the ferro...

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PUM

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Abstract

A magnetic tunnel junction element includes a first magnetic layer and a second magnetic layer acting as a memory layer, and a first insulating layer sandwiched between the first and second magnetic layers. Further, the magnetic tunnel junction element includes a third magnetic layer on a side of the second magnetic layer opposite from the first insulating layer. This third magnetic layer constitutes a closed magnetic circuit together with the second magnetic layer.

Description

technical field [0001] The present invention relates to magnetic tunnel junction elements and magnetic memories using such magnetic tunnel junction elements. Background technique [0002] Recently, the application of magnetic tunnel junction (MTJ) elements for replay heads of hard disk drives (HDDs) and magnetic memories has been studied and discussed, because it is different from conventional anisotropic magnetoresistance (AMR) elements and giant magnetostrictors. Compared to resistive (GMR) elements, MTJ elements provide a larger output. [0003] In particular, similar to semiconductor memory, magnetic memory is a solid-state memory with a non-operating part, which is more useful than semiconductor memory due to its own characteristics: the information stored in it is not lost even if the power is turned off; repeated rewriting The number of times is infinite, that is, provides great durability; there is no danger of damage to the recorded contents even if exposed to radi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/16H01F10/32H10B20/00
CPCG11C11/16B82Y10/00H01L43/08B82Y25/00H01F10/3254H01F10/123G11C11/161H10N50/10
Inventor 道嶋正司林秀和南方量二
Owner SHARP KK
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