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Chemical mechanical grinding control method and device and storage medium

A technology of chemical mechanics and control methods, which is applied in the direction of grinding machine tools, grinding tools, grinding devices, etc., can solve problems such as low product reliability and yield, and fluctuations in the grinding rate of grinding discs, so as to control the grinding thickness and improve reliability and yield. Effect

Active Publication Date: 2021-08-13
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present application provides a chemical mechanical grinding control method, equipment and storage medium, which can solve the problem of product reliability and good performance caused by the fluctuation of the grinding rate of the grinding disc in the grinding step of a fixed time in the chemical mechanical grinding method provided in the related art. low rate problem

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  • Chemical mechanical grinding control method and device and storage medium
  • Chemical mechanical grinding control method and device and storage medium
  • Chemical mechanical grinding control method and device and storage medium

Examples

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Embodiment Construction

[0042] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0043] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientati...

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Abstract

The invention discloses a chemical mechanical grinding control method and device and a storage medium. The method comprises the steps that first grinding time is calculated according to a first front value, a first rear value and a first grinding rate; according to the first grinding time, a first type of grinding disc is controlled to grind a target wafer; according to a second front value, a second rear value and a second grinding rate, second grinding time is obtained through calculation, and the hardness of a second type of grinding disc is different from that of the first type of grinding disc; and according to the second grinding time, the second type of grinding disc is controlled to grind the target wafer. According to the method, the first grinding time of the first type of grinding disc and the second grinding time of the second type of grinding disc are obtained through calculation, so that the target wafer is ground according to the first grinding time and the second grinding time; and the first time and the second time are obtained through calculation based on the thickness difference in the previous grinding process, therefore, the grinding thickness can be accurately controlled, and the yield of products is improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to a chemical mechanical polishing (CMP) control method, device and storage medium. Background technique [0002] The chemical mechanical polishing process is an important process in the manufacture of semiconductor devices. It uses the synergistic effect of chemical etching and mechanical polishing to planarize the semiconductor wafer, which can effectively take into account the local and global flatness of the semiconductor device. [0003] In the related art, in the chemical polishing process, it includes a grinding step of fixed time (by time) and a grinding step of dynamic time. Wherein, the grinding step of fixed time is a method of grinding at a fixed time, and the grinding step of dynamic time is a method of grinding by dynamically adjusting the grinding time. [0004] However, in the grinding step of fixed time (especially in the process o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/00B24B37/005B24B37/11
CPCB24B37/00B24B37/005B24B37/11
Inventor 胡宗福龚昌鸿韦家蓓陈建勋张瑜
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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