Manufacturing method of memory address line

Abstract

The embodiment of the invention provides a manufacturing method of a memory address line. The manufacturing method comprises the following steps of providing a semiconductor structure, wherein the semiconductor structure at least comprises a first address line layer; forming a first sacrificial layer on the first address line layer; performing first etching on the first sacrificial layer to form a plurality of first sacrificial strips which extend along a first direction and are spaced by a first distance; forming a first directional assembly layer, wherein the first directional assembly layer comprises a plurality of second sacrificial strips and first medium strips which are arranged at intervals; the plurality of second sacrifice strips extend along the first direction and are spaced by a second distance; the second distance is smaller than the first distance; and partial second sacrificial strips in the plurality of second sacrificial strips are overlapped with the projections of the plurality of first sacrificial strips on a first plane perpendicular to the first direction; removing the first dielectric strips; and performing second etching on the first address line layer by using the second sacrificial strip as a first mask layer to obtain a first address line.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductors, and in particular to a method for manufacturing memory address lines. Background technique [0002] With the continuous development of the information society, the demand for high-density memory in various industries is increasing. Therefore, in order to increase the storage density of the memory, the distribution density of the address lines (word lines and bit lines) in the memory is generally designed to be relatively high, that is, The gap between word lines or bit lines is very small. [0003] In the related art, there are many problems when forming address lines in a memory with a relatively high distribution density. Contents of the invention [0004] In order to solve related technical problems, an embodiment of the present invention proposes a method for manufacturing memory address lines. [0005] An embodiment of the present invention provides a method ...

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Problems solved by technology

[0003] In the related art, there are many problems when forming the address lines in the memory with high distribution density

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