A flash memory reliability assessment and failure warning method based on the noise spectrum characteristics of the storage channel

Abstract

The present invention proposes a reliability assessment and failure early warning method based on the noise spectrum characteristics of the flash memory storage channel. The method performs continuous read operations on the monitored flash memory to read the original bit error rate data; Convert, obtain the flash memory channel noise spectrum feature; judge whether the power spectral density of the flash memory channel noise spectrum feature exceeds the threshold; the present invention can quickly obtain the noise data of the current storage channel, and can use the noise spectrum feature to evaluate and invalidate the current data reliability of the flash memory Early warning; not only can realize full-time internal data reliability monitoring and make timely failure warning without affecting the normal operation of the flash memory, but also can use the noise frequency entropy function to calculate the storage bit reliability in the threshold voltage overlapping area, which is very important for flash storage The bit LLR table is dynamically updated.

Description

technical field [0001] The invention belongs to the field of solid-state storage, and in particular relates to a flash memory reliability evaluation and failure early warning method based on storage channel noise spectrum characteristics. Background technique [0002] Solid State Drives (SSDs) have the advantages of fast read and write speed, low power consumption, and strong shock resistance. The excellent characteristics of SSDs make them gradually replace traditional mechanical rotating disks, and have been widely used in embedded and consumer electronics. and other mobile storage devices. However, unlike mechanical storage devices, the damage of solid-state storage devices is highly accidental, and once the data is lost, it is difficult to recover. Therefore, it is of great significance to monitor the working status and abnormal status warning of flash memory devices. The current mainstream method is to limit the number of P / E cycles of flash memory, but the reliability...

AI Technical Summary

Problems solved by technology

However, unlike mechanical storage devices, solid-state storage devices are frequently damaged, and once data is lost, it is difficult to recover. Therefore, it is of great significance to monitor the working status and abnormal status warning of flash memory devices.

The current mainstream method is to limit the number of P / E cycles of flash memory, but the reliability of different flash memory blocks is different, and the P / E tolerance is also very different

When the flash memory controller strictly limits the number of P / E cycles, it will cause waste of storage resources, but relaxing the limit on the number of P / E cycles will cause data loss due to flash memory failure

[0003] The current solid-state memory mainly uses NAND Flash as the storage core, and there is a greater risk of accidental failure due to factors such as Program / Erase (P / E) wear and tear during use

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