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Substrate processing apparatus

A technology for substrate processing and equipment, applied in waveguide-type devices, multiple input and output pulse circuits, coatings, etc., to solve problems such as leakage, generation of interference noise, deterioration of plasma uniformity and processing uniformity, etc.

Pending Publication Date: 2021-09-14
エーエスエムアイピーホールディングベーフェー
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, some RF power may not be supplied into the reaction space, but may leak through another part of the reactor, causing RF interference affecting other adjacent reactors
In other words, interference noise is generated in the peak-to-peak voltage (Vpp) of the supplied RF power
As a result, the uniformity of plasma generated in the reaction space of each reactor and the uniformity of treatment deteriorate

Method used

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  • Substrate processing apparatus
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Embodiment Construction

[0044] Reference will now be made in detail to the embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the present embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Accordingly, the embodiments are merely described below, by referring to the figures, to explain aspects of the present description. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. When an expression such as "at least one" precedes a list of elements, it modifies the entire list of elements and does not modify the individual elements of the list.

[0045] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0046] In this regard, the present embodiments may have different forms and should not be const...

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Abstract

A substrate processing apparatus capable of removing signal interference between reactors includes: a first reactor, a second reactor adjacent to the first reactor, and a power generator configured to supply first power to the first reactor and supply second power to the second reactor, wherein the power generator is further configured to synchronize phases of the first power and the second power.

Description

[0001] Cross References to Related Applications [0002] This application is based upon and claims priority under 35 U.S.C. §119 to U.S. Patent Application No. 62 / 989515, filed March 13, 2020, in the U.S. Patent and Trademark Office, the entire contents of which are hereby incorporated by reference. technical field [0003] One or more embodiments relate to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of eliminating signal interference between reactors. Background technique [0004] A substrate processing apparatus including multiple reactors in one chamber has the advantage of improving precise control of individual substrates and hourly productivity. Such a substrate processing apparatus includes gas supply means for supplying reaction gas to each reactor and RF power supply means for supplying RF power to each reactor for plasma processing. The RF power supply consists of an RF power generator and a matching network...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
CPCH01J37/32183H01J37/32137H01J37/32724H03K5/24H01J37/32155H01J37/32715C23C16/505H01J37/32926H01J37/32889H01J37/32899H01J37/32091H01J37/32577
Inventor 严基喆韩镕圭全尚珍金头汉李相烨
Owner エーエスエムアイピーホールディングベーフェー