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Manufacturing method of NOR flash memory device

A flash memory device and manufacturing method technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problem that the thickness of the side wall is not easy to control, etc.

Pending Publication Date: 2022-03-01
HUA HONG SEMICON WUXI LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to overcome the defect that the thickness of the sidewall is not easy to control and easily form SAS void or ILD void in the prior art or non-flash memory device manufacturing process, and provide a kind of non-flash memory device manufacturing process method

Method used

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  • Manufacturing method of NOR flash memory device
  • Manufacturing method of NOR flash memory device
  • Manufacturing method of NOR flash memory device

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Embodiment Construction

[0030] The invention will be described below with reference to the accompanying drawings.

[0031] This embodiment provides a method of fabricating one or non-flash memory device. Refer figure 2 The method of making the or non-flash memory device includes the following steps:

[0032] Step S301 is deposited to form an ONO layer of the side wall. The ONO layer includes a first oxide layer 101, a nitride layer 102, and a second oxide layer 103.

[0033] Step S302, wet etching to remove part of the second oxide layer.

[0034] Step S303, the ONO layer is carried out to form a side wall.

[0035] Then, other structures forming the or non-flash memory device, for example, the source drain ion implantation is performed on the storage unit area, and the source canal ion implantation is performed.

[0036] In the specific implementation, first, according to step S301, reference image 3 The first oxide layer 101, the nitride layer 102, and the second oxide layer 103 are formed, thereby for...

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Abstract

The invention provides a manufacturing method of a NOR flash memory device, which comprises the following steps of: S1, depositing to form an ONO layer which comprises a first oxide layer, a nitride layer and a second oxide layer; s2, performing wet etching to remove local parts of the second oxide layer; and S3, performing dry etching on the ONO layer to form a side wall. According to the method, the SAS area can be filled, and SAS void is avoided; and the ILD filling is obviously improved.

Description

Technical field [0001] The present invention relates to the field of semiconductor manufacturing techniques, and more particularly to a method of fabricating one or non-flash memory device. Background technique [0002] Refer figure 1 The side wall (SPACER) 11 of the NOR flanh device is an ONO (oxide-nitride-oxide) structure comprising a first oxide layer 101, a nitride layer 102, and a second oxide layer 103. Then, the ONO structure is etched to form a side wall 11. [0003] On the one hand, the thickness of the side wall cannot be too thin, and the SAS (source-dependent) area is easily filled, resulting in Sasvoid (hole). On the other hand, the side walls cannot be too thick, and it is easy to fill in the fill of the following ILD (inner dielectric layer), resulting in Ild VoID. Inventive content [0004] The technical problem to be solved by the present invention is to overcome the prior art or non-flash memory device manufacturing process, the thickness of the side wall is n...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L27/11521H01L27/11568H10B41/30H10B43/30
CPCH01L21/76837H01L21/76895H10B43/30H10B41/30
Inventor 李小康张继亮
Owner HUA HONG SEMICON WUXI LTD
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