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Strain gauge and strain measurement assembly

A technology of strain gauges and isolation components, applied in the field of strain gauges, can solve problems such as wrong strain measurement, drift, instability, etc.

Pending Publication Date: 2022-03-04
MEASUREMENT SPEC +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Changes in strain gauge resistance caused by external fields or moving ions can cause drift, instability, and other forms of erroneous strain measurements

Method used

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  • Strain gauge and strain measurement assembly
  • Strain gauge and strain measurement assembly
  • Strain gauge and strain measurement assembly

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Embodiment Construction

[0012] Exemplary embodiments of the present disclosure are described in detail with reference to the accompanying drawings, wherein like reference numerals refer to like elements. This disclosure may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will convey the concept of the disclosure to those skilled in the art. Furthermore, in the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the disclosed embodiments. It may be evident, however, that one or more embodiments may be practiced without these specific details.

[0013] Such as figure 1 As shown, the strain measurement assembly 10 according to the embodiment includes a force responsive member 100 , a strain gauge 200 and an attachment material 300 attaching the strain gauge 200 to the forc...

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Abstract

A strain gauge (200) includes a resistor (250) formed of a doped silicon material, a conductive shield (260), and an isolation element (270) disposed between the resistor (250) and the conductive shield (260). The isolation element (270) electrically isolates the resistor (250) from the conductive shield (260).

Description

technical field [0001] The present invention relates to strain gauges, and more particularly, to strain gauges including piezoresistors. Background technique [0002] Semiconductor silicon strain gauges work through the piezoresistive effect, where the resistivity changes when mechanical strain is applied. The voltage across the strain gauge is measured to determine the strain of the object to which the semiconductor silicon strain gauge is attached. [0003] However, semiconductor silicon strain gauges are affected by external fields and moving ions. Mobile ions are generated during strain gage production or during strain gage installation, and are usually randomly distributed before the strain gage is used. In the use of strain gauges, mobile ions gather in the opposite direction to the voltage potential; biasing and applications involving high temperature or humidity accelerate ion migration. Concentrated accumulation of mobile ions forms leakage current paths and chan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01B7/16H01L23/552H10N30/30
CPCG01B7/18H01L23/552G01L1/2293G01L1/18G01L1/2287G01L1/2206H10N30/302
Inventor D.E.瓦格纳J.霍夫曼Y-D.金
Owner MEASUREMENT SPEC