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Semiconductor processing method

A treatment method and gas technology, applied in semiconductor/solid-state device manufacturing, coating, gaseous chemical plating, etc., can solve problems such as deterioration of device response time

Pending Publication Date: 2022-03-29
エーエスエムアイピーホールディングベーフェー
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, resistance-capacitance (RC) delay due to parasitic capacitance occurring between cells and deterioration of device response time due to resistance-capacitance delay occur

Method used

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  • Semiconductor processing method
  • Semiconductor processing method
  • Semiconductor processing method

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Embodiment Construction

[0035] Reference will now be made in detail to the embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the present embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Accordingly, the embodiments are merely described below, by referring to the figures, to explain aspects of the present specification. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Expressions such as "at least one of" when preceding a list of elements modify the entire list of elements and do not modify the individual elements of the list.

[0036] Hereinafter, one or more embodiments will be described more fully with reference to the accompanying drawings.

[0037] In this regard, the present embodiments may have different forms and should not be construed as being lim...

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Abstract

The invention discloses a substrate processing method capable of easily forming an air gap. The substrate processing method comprises the following steps: forming a first insulating layer covered by a first step on a patterned structure comprising a first bulge and a second bulge; and forming a second insulating layer on the first insulating layer, the second insulating layer having a second step cover lower than the first step cover, in which an air gap is formed between the first protrusion and the second protrusion by repeatedly forming the second insulating layer.

Description

technical field [0001] One or more embodiments relate to substrate processing methods, and more particularly, to substrate processing methods that form air gaps inside gaps between patterned structures. Background technique [0002] In the manufacture of semiconductor devices such as DRAMs, as the process becomes finer, the pitch between cells becomes narrower. Therefore, resistance-capacitance (RC) delay due to parasitic capacitance occurring between cells and deterioration of device response time due to resistance-capacitance delay occur. [0003] To solve this problem, a process of forming an air gap between electrodes as a gap-filling material has been considered to lower the dielectric constant of the buried material in the region between the electrodes. The air-gap process not only prevents RC delay due to low dielectric constant, but also prevents possible structural deformation issues such as film cracking and contact misalignment due to shrinkage of the gap-filling...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3105
CPCH01L21/31051H01L21/31053H01L21/764H01L21/7682H01L21/0217H01L21/02274H01L21/0228H01L21/02334H01L21/02208H01L21/76819C23C16/345C23C16/4554C23C16/52C23C16/56
Inventor 姜熙成
Owner エーエスエムアイピーホールディングベーフェー