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Flip LED chip and manufacturing method thereof

A technology of LED chip and manufacturing method, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., and can solve the problems such as large height difference of tin electrodes

Pending Publication Date: 2022-05-24
JIANGXI ZHAO CHI SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Based on this, an embodiment of the present invention provides a flip-chip LED chip and its manufacturing method, aiming to solve the problem in the prior art that the tin electrode height difference on the metal bonding layer of the flip-chip LED chip is prepared by brushing tin. bigger problem

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  • Flip LED chip and manufacturing method thereof
  • Flip LED chip and manufacturing method thereof
  • Flip LED chip and manufacturing method thereof

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Embodiment 1

[0038] see figure 1 , figure 1 A method for fabricating a flip-chip LED chip proposed in Embodiment 1 of the present invention is shown, and the method specifically includes steps S01 to S03.

[0039] In step S01, the tin electrode of the LED wafer is turned upward and fixed on the stage.

[0040] It should be noted that when the LED wafer is fixed on the stage, the tin electrode should face upward, and at the same time, ensure that the LED wafer is relatively parallel to the scraper on the grinding workpiece table. When the scraper is in contact with the tin electrode, the rotating scraper will not make the LED chip shake, thus ensuring the grinding accuracy.

[0041] Step S02, control the scraper on the flattening workpiece table to rotate and move to just above the tin electrode, when the speed of the scraper reaches the working speed, control the carrier to move in the direction of the flattening workpiece table , when the scraper is in contact with the tin electrode, i...

Embodiment 2

[0048]see figure 2 , figure 2 The manufacturing method of the flip-chip LED chip proposed in the second embodiment of the present invention is shown, and the method specifically includes steps S10 to S18.

[0049] In step S10, the height requirement value of the tin electrode is obtained.

[0050] It can be understood that the height requirement of the tin electrode is the target thickness of the tin electrode, and the target thickness of the tin electrode is also different according to different chips.

[0051] Step S11: Detect the height values ​​to be ground of all the tin electrodes on the LED wafer, and obtain the maximum height value and the minimum height value of the height values ​​to be ground.

[0052] It should be noted that after the tin brushing process is performed on the LED wafer, the height of the tin electrode is 15 μm to 150 μm. Due to the limitations of the tin brushing process, the height of the tin electrode will be uneven. If the height of the tin e...

Embodiment 3

[0063] The manufacturing method of the flip-chip LED chip in this embodiment includes the following steps:

[0064] The LED wafer is placed on the carrier, and the vacuum generator is turned on, and then the LED wafer is adsorbed on the carrier. The chip type on the LED wafer is 4040 chip, and the height of the tin electrode on the 4040 chip is controlled to 80μm ±5μm, the actual TVV is 8.4, control the rotation of the scraper on the grinding workpiece table, and move it to the top of the tin electrode. When the speed of the scraper reaches 2500rpm, the stage moves up slowly until it contacts with the highest tin electrode Stop the movement, and then move up at a speed of 500nm / min for 60min. After 60min, the stage is reset, the height of the tin electrode is ground to 50μm±1.5μm, and the TTV is 2.8.

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Abstract

The invention provides a flip LED chip and a manufacturing method thereof, and the method comprises the steps: enabling a tin electrode of an LED wafer to face upwards, fixing the tin electrode on a carrying table, controlling a scraping disc on a grinding workpiece table to rotate and move to the position right above the tin electrode, and controlling the carrying table to move towards the grinding workpiece table when the rotating speed of the scraping disc reaches the working rotating speed, and when the scraping disc makes contact with the tin electrode, the scraping disc enters a preparation state, the carrying table is controlled to enter a working state from the preparation state, and the working state is that the carrying table moves towards the grinding workpiece table by a set distance at a constant speed, so that the scraping disc makes contact with the tin electrode, and grinding is completed. The method provided by the invention can solve the problem that the height difference of the tin electrode prepared on the metal bonding layer of the flip LED chip through the tin brushing process is large in the prior art.

Description

technical field [0001] The invention belongs to the technical field of flip-chip LED chips, and in particular relates to a flip-chip LED chip and a manufacturing method thereof. Background technique [0002] As an influential new product in the optoelectronics industry, light-emitting diodes are widely used in general lighting, display screens, signal lights, Backlight, special lighting, indoor display, liquid crystal display, vehicle lighting, vehicle display and other fields. [0003] In recent years, in the field of chips, flip-chip technology is emerging. Because flip-chip LED chips have the advantages of good heat dissipation, low voltage, high brightness, high reliability, and high saturation current density, they are widely used in high-power, outdoor lighting applications. It is very popular, and the application is gradually mature. [0004] In the existing flip-chip LED chips, tin electrodes are prepared on the metal bonding layer of the chip through a tin brushin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/36
CPCH01L33/36H01L2933/0016
Inventor 刘伟杨起李文涛简弘安张星星胡加辉金从龙顾伟
Owner JIANGXI ZHAO CHI SEMICON CO LTD
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