Method for filling a gap and related system and apparatus

Abstract

Methods and related systems for filling gap features included in a substrate are disclosed. The method includes the step of providing a substrate having one or more gap features into a reaction chamber. The one or more gap features include an upper portion having an upper surface and a lower portion having a lower surface. The method further includes the step of subjecting the substrate to a plasma treatment. Thus, the upper surface is suppressed while the lower surface is substantially unaffected. The method then includes the step of selectively depositing a silicon-containing material on the lower surface.

Description

technical field [0001] The present disclosure generally relates to methods and systems suitable for forming electronic devices. More specifically, the present disclosure relates to methods and systems that may be used to deposit materials in gaps, trenches, and the like. Background technique [0002] The scaling of semiconductor devices has led to dramatic increases in the speed and density of integrated circuits. However, with the miniaturization of the wiring pitch of LSI devices, void-free filling of high-aspect-ratio gaps or trenches (such as trenches with an aspect ratio of 3 or higher) becomes increasingly difficult due to the limitations of existing deposition processes. more and more. Thus, for example in the case of logic and / or memory devices, a process for efficiently filling high aspect ratio features, such as gaps such as trenches, on a semiconductor substrate is required. In particular, there is a need for a process for efficiently filling high aspect ratio ...

AI Technical Summary

Problems solved by technology

The manner in which various embodiments of the present disclosure address shortcomings of existing methods and systems is discussed in more detail below

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