Empirical mode guided-mode oriented crystallization device and growth method based on oriented mode guided-mode oriented crystallization device

A technology of directional crystallization and guided mode method, which is applied in the direction of single crystal growth, crystal growth, chemical instruments and methods, etc., can solve the problems of difficult growth of high melting point oxide crystals, high quality of grown crystals, and difficult cleaning of crucibles, etc. Economic use value, high crystal quality, and the effect of reducing production costs

Pending Publication Date: 2022-06-17
TONGJI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a guided mode oriented crystallization device and a growth method based on the device in order to solve the above problems. The device and method are simple to operate, effective and controllable, and can effectively realize the growth and preparat

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  • Empirical mode guided-mode oriented crystallization device and growth method based on oriented mode guided-mode oriented crystallization device
  • Empirical mode guided-mode oriented crystallization device and growth method based on oriented mode guided-mode oriented crystallization device

Examples

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Effect test

Embodiment 1

[0046] Gadolinium scandate (GdScO 3 ) The growth process of the single crystal is as follows: Gd with a purity of 99.99% 2 O 3 with Sc 2 O 3The raw materials are accurately weighed according to the stoichiometric ratio, mixed uniformly, pressed isostatically at 200MPa, put into an alumina crucible and sintered at 1500℃ for 10h; put the sintered raw materials into the iridium crucible, and select the gap width of the capillary channel A 0.4mm mold is placed on the crucible cover, such as figure 1 As shown, GdScO is placed in the die mouth 3 Grain; crucible cover is lifted by molybdenum suspension rod, and is not stressed by crucible; GdScO in (100) direction is selected 3 The seed crystal is fixed on the seed rod chuck; the furnace door is closed, the mechanical pump is turned on for vacuuming, when the vacuum degree reaches 5Pa, the mechanical pump is turned off, and the protective gas is charged to the standard atmospheric pressure; Completely melt; continue to heat up ...

Embodiment 2

[0048] 1.0% Ho:Lu in this example 2 O 3 The growth process of the single crystal is as follows: the purity of 99.99% Lu 2 O 3 with Ho 2 O 3 The raw materials are accurately weighed according to the stoichiometric ratio, mixed evenly, pressed under isostatic pressing at 200 MPa, put into an alumina crucible and sintered at 1600 °C for 10 hours; The mold of mm is placed on the crucible cover, and the mold mouth is placed with Lu 2 O 3 Grain; the crucible cover is lifted by the molybdenum suspension rod and is not stressed by the crucible; choose Lu in the (100) direction 2 O 3 The seed crystal is fixed on the seed rod chuck; the furnace door is closed, the mechanical pump is turned on for vacuuming, when the vacuum degree reaches 8Pa, the mechanical pump is turned off, and the protective gas is charged to the standard atmospheric pressure; Completely melted; continue to heat up to 30 °C, shake the seed crystals after the pellets at the die mouth begin to melt, and keep t...

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Abstract

The invention relates to an oriented crystallization device adopting an edge-defined film-fed crystal method, which comprises a crucible and a crucible cover which are lifted by a lifting rod; a vertical capillary channel is arranged in the middle of the mold, and the lower end of the mold extends into the crucible; and the seed crystal rod is positioned at the upper part of the crucible cover, a seed crystal is fixed at the lower end of the seed crystal rod, and the seed crystal is close to an upper end mold opening of the mold. The vertical capillary channel is formed in the middle of the mold, crystallization is started, crystals can directionally grow along seed crystals, and high-quality crystals grow; the crucible cover is lifted through the lifting rod and is not stressed on the crucible, and in the crystallization process, crystals crystallized on the mold are well separated from the crucible through downward movement of the crucible, so that the protection of the expensive metal crucible is facilitated. The problems that high-melting-point oxide crystals are difficult to grow and the crucible is difficult to clean are effectively solved, the grown crystals are high in quality and large in size, the production cost is reduced, the working efficiency is high, and the method has high economic use value.

Description

technical field [0001] The invention belongs to the technical field of crystal material preparation, and in particular relates to a guided-mode oriented crystallization device and a growth method based on the device. Background technique [0002] High melting point oxide crystal (GdScO 3 , Lu 2 O 3 , Sc 2 O 3 , Y 2 O 3 etc.), especially rare earth sesquioxide single crystal, has a series of advantages: easy to achieve various rare earth ion doping; high thermal conductivity 12.5 ~ 16.5W / mK; strong field coupling characteristics; high impact factor, high damage Threshold; low phonon energy. Low phonon energies imply a low rate of nonradiative transitions between metastable electronic energy levels of luminescent ions incorporated into the lattice, and thus a higher probability of radiation and a higher quantum efficiency of phototransitions. Scientists have made it clear that such laser crystals have great application prospects in high-power lasers, mid-infrared and v...

Claims

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Application Information

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IPC IPC(8): C30B15/24
CPCC30B15/24
Inventor 薛艳艳徐军董建树李健达唐慧丽王庆国
Owner TONGJI UNIV
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