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Reconfigurable transistor device

A transistor and device technology, applied in the field of radio frequency transistor structure, can solve the problems of small performance improvement

Pending Publication Date: 2022-06-21
QORVO US INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the moderate figure of merit of the isolator, only a relatively small improvement in performance is obtained

Method used

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  • Reconfigurable transistor device
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Embodiment Construction

[0014] The embodiments described below represent essential information to enable those skilled in the art to practice the embodiments and illustrate the best mode for practicing the same. Upon reading the following description in conjunction with the accompanying drawing figures, those skilled in the art will understand the concepts of the invention and recognize applications of these concepts not specifically addressed herein. It should be understood that these concepts and applications are within the scope of the invention and the appended claims.

[0015] It will be understood that although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish various elements. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present invention. As us...

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Abstract

A reconfigurable transistor device includes a substrate, a plurality of first transistor interdigitals disposed in a first region above the substrate, and a phase change switch (PCS) including a block of phase change material (PCM) disposed in a second region above the substrate, and a PCM block for selectively coupling the first group of the plurality of first transistor interdigitals with a bus, where the PCM block is electrically insulated in an amorphous state and electrically conductive in a crystalline state. The PCS further includes a thermal element disposed proximate to the PCM block, where the first thermal element may maintain the PCM block within a first temperature range until the PCM block is converted to an amorphous state, and maintain the PCM block within a second temperature range until the first PCM block is converted to a crystalline state.

Description

[0001] Related Patent Applications [0002] This application claims the benefit of Provisional Patent Application No. 62 / 935,662, filed November 15, 2019, the disclosure of which is incorporated herein by reference in its entirety. technical field [0003] The present invention relates to transistors, in particular to radio frequency transistor structures. Background technique [0004] Silicon-based digital and analog integrated circuits simulate variable total gate width at the periphery of transistor devices by selectively turning on and off parallel transistors comprising transistor devices. However, off transistor parasitic capacitance, inductance, and resistance affect the performance of transistors that are still on. As frequency and output power increase, the amount of performance degradation of radio frequency (RF) type field effect transistor (FET) devices such as RF amplifiers also increases. Accordingly, isolation switches on each side of the FET (including the ...

Claims

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Application Information

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IPC IPC(8): H01L45/00H01L27/24
CPCH01L29/41758H01L29/778H01L29/2003H10N70/823H10N70/231H10N70/8613H10N70/8828H10N79/00H01L29/7786H10B63/30H10N70/8413H10N70/8833
Inventor 凯文·韦斯利·科巴亚希朱利奥·C·科斯塔
Owner QORVO US INC