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Growth process of monochip-type oxide layer

A pad oxide layer, single-chip technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as long manufacturing time, and achieve the effect of short response time and good uniformity

Inactive Publication Date: 2004-09-15
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although one or two hundred pieces are processed at a time, the manufacturing time is very long, about five or six hours

Method used

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  • Growth process of monochip-type oxide layer
  • Growth process of monochip-type oxide layer

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] see figure 1 , which is a schematic cross-sectional view showing the result of a front-end manufacturing method of a semiconductor device according to a preferred embodiment of the present invention. First, a brand-new silicon chip 100 is provided, which is properly cleaned, and then the silicon chip 100 is sent into a reaction chamber, and hydrogen gas (H 2 ) and oxygen (O 2 ), growing a thermal oxide layer (thermal oxide layer), such as growing a pad oxide layer (pad oxide) 102 in a single-chip manner, the thinner one is about 40-70 angstroms, and the thicker one is about 100-200 angstroms, The process conditions can be:

[0022] 1.H 2 / H 2 +O 2 Ratio range: 5~33%

[0023] 2. Pressure: 5~15torrs (Torrs)

[0024] 3. Temperature: 850℃~1100℃

[0025] The so-called single-chip method means that a silicon chip enters a single reaction chamber (chamber) for reaction, and it only takes about two to three minutes to exit the reaction chamber, which can shorten the man...

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Abstract

The growth process of monochip-type oxide layer includes delivering one silicon chip into one reactor and introducing hydrogen and oxygen, and fast raising the temperature inside the reactor to 850-110 deg.c to grow one SiO2 layer on the silicon chip. The final temperature error in the reactor is controlled within 1-2 deg.c.

Description

technical field [0001] The invention relates to a semiconductor manufacturing method, in particular to a single-chip pad oxide layer manufacturing method. Background technique [0002] When we expose the silicon chip to a high temperature and oxygen-containing environment for a period of time, we can grow a layer of insulator-SiO on the surface of the silicon chip that has good adhesion to silicon and meets our requirements. 2 . SiO 2 It is widely used in silicon-based semiconductor components. In addition to being produced by heating and oxidizing silicon chips, it can also be obtained by chemical vapor deposition techniques, such as low-pressure chemical vapor deposition and plasma chemical vapor deposition. [0003] Which way to choose to make SiO 2 Layer, has considerable relationship with the manufacturing method of the component. Basically, among these three technologies, SiO grown by thermal oxidation 2 The electrical and physical properties are the best, but th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/316H01L21/318
Inventor 苏金达江瑞星
Owner MACRONIX INT CO LTD