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Ion beam radiator and method for triggering plasma by using such radiator

A plasma and radiation device technology, applied in the fields of plasma, irradiation device, semiconductor/solid-state device manufacturing, etc., can solve problems such as trouble, and achieve the effect of simple trigger operation, improved productivity, and reliable triggering

Inactive Publication Date: 2005-02-23
NISSIN ION EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, frequent maintenance to remove deposited material can become cumbersome

Method used

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  • Ion beam radiator and method for triggering plasma by using such radiator
  • Ion beam radiator and method for triggering plasma by using such radiator
  • Ion beam radiator and method for triggering plasma by using such radiator

Examples

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Embodiment Construction

[0036] figure 1 is a cross-sectional view showing an ion beam irradiation apparatus constructed according to the present invention.

[0037] exist figure 1 In the ion beam irradiation apparatus shown, in a vacuum chamber 8 , a substrate 4 (for example, a semiconductor substrate) held by a holder 6 is irradiated with an ion beam 2 . Then, a process of implanting ions into the substrate 4 is performed.

[0038] In order to uniformly irradiate the entire surface of the substrate 4 with the ion beam 2, the ion beam 2 or the substrate 4 is moved for sweeping while the ion beam 2 is irradiated. In this embodiment, the ion beam 2 and the substrate 4 move in the X and Y directions, respectively. As shown, the X and Y directions are perpendicular to each other. Of course, this does not exclude embodiments in which the ion beam 2 moves in the X direction and the substrate 4 moves in the Y direction.

[0039] A radio frequency discharge type plasma generator 10 is provided to genera...

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PUM

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Abstract

When a plasma is ignited in a plasma generator, an ion beam is made to run in the plasma generator, and in this state, a positive voltage with respective to ground is applied to a plasma production chamber from a DC power source. Secondary electrons are generated when the ion beam collides with a plasma generating gas which flows out of the plasma production chamber into a path of the ion beam. The secondary electrons are led into the plasma production chamber by the positive voltage, and within the plasma production chamber, a plasma ignition is triggered using the secondary electrons led into the plasma production chamber and a radio frequency.

Description

technical field [0001] The present invention relates to an ion beam irradiating apparatus for performing a process of implanting an ion beam into a substrate by irradiating the substrate with an ion beam, and to a method of operating the ion beam irradiating apparatus. The present invention also relates to a method of manufacturing a semiconductor device by implanting an ion beam into a semiconductor substrate in such a manner as to irradiate the substrate with an ion beam, and more particularly, to an apparatus for irradiating a substrate with an ion beam The device serves to suppress cumulative charging (charging) within the substrate surface upon irradiation. Background technique [0002] When manufacturing semiconductor devices by ion implantation, it is critical to suppress in-surface charging of a substrate when the substrate is irradiated with an ion beam. Charge suppression techniques have been proposed in the prior art. In the proposed techn...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G21K5/00G21K5/04H01J37/20H01J37/317H01L21/223H01L21/265H05H1/24H05H1/46
CPCH01J2237/0041H01L21/2236H01J37/317H01L21/265
Inventor 滨本成显
Owner NISSIN ION EQUIP CO LTD