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Single-electron transistor with stable switching characteristics

A technology with single-electron transistor and switching characteristics, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as the adverse effects of stable operation of single-electron tubes

Inactive Publication Date: 2006-02-08
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the quantum confinement effect will adversely affect the stable operation of the single electron tube used as a device, and this problem has not been resolved for a long time

Method used

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  • Single-electron transistor with stable switching characteristics
  • Single-electron transistor with stable switching characteristics
  • Single-electron transistor with stable switching characteristics

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] 1. Evaporate a 60nm thick silicon dioxide layer on the surface of the doped silicon wafer (degenerately doped silicon wafer) by magnetron sputtering as the substrate for the next step, and the doped silicon below the silicon dioxide layer The sheet can be used as the gate 3 of a single electron tube.

[0029] 2. The preparation of the pair of nanometer electrodes can be prepared by the methods provided by British "Nature" (nature, 1997,389,699) and U.S. "Appl.Phys.Lett., 1999,75,301):

[0030] (1) Coating polymethyl methacrylate / poly(methyl methacrylate-methacrylamide) (PMMA / P(MMA-MAA)) double-layer glue on the silica substrate as an electron beam resist agent; use the electron beam etching method to etch a groove with a width and depth of about 200 nanometers on the surface of the double-layer glue, the electron beam acceleration voltage used is 20 kV, and the beam spot size is 0.1 micron; The evaporator evaporates gold or copper with a thickness of about 15 nanometer...

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Abstract

The present invention relates to one kind of single electron transistor with non-crystalline nano particle as colulomb island. The transistor consists of drain, source, gate and coulomb island, and features that the coulomb island of non-crystalline nano particle locates between the source and the drain and is separated form the source and the drain on its two sides via tunnel. Non-crystalline nano particle, such as non-crystalline nano Pd particle, with suppressed quantized energy as coulomb island can avoid the instability caused by discrete energy level, unlike the case with common crystalline metal, nano semiconductor particle or single molecule as coulomb island. This kind of non-crystalline single electron transistor may be produced via available single electron transistor producing technology, i. e., nano electrode pair and self-assembling technology, and has the advantages of being feasible and improved device performance.

Description

1. Technical field: [0001] The invention relates to a single-electron transistor used as a switch in electronic technology, in particular to a single-electron transistor with amorphous nanoparticles as Coulomb islands. 2. Background technology: [0002] Since the invention of the transistor in 1947, the size of transistors has continued to decrease and their switching speeds have continued to increase. But as the size of transistors continues to shrink down to the nanometer scale, quantum effects become more and more important in how the devices work. That is to say, at the mesoscopic scale, many new physical phenomena that do not exist in the macroscopic system will appear. The traditional metal oxide semiconductor field effect transistor (MOSFET, metallic oxide semiconductor field effect transistor) based on classical physics can no longer work properly. In order to solve this problem, in 1985, Dmitri Averin and Konstantin Likharev at Moscow University proposed a new tri...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/772
Inventor 鲁山卢威王兵王海千王晓平侯建国
Owner UNIV OF SCI & TECH OF CHINA