Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for making metallized capacitor

A technology of metal capacitors and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as increasing the complexity of the manufacturing process, and achieve the effect of preventing easy leakage and good linear capacitance voltage

Inactive Publication Date: 2004-03-17
TAIWAN SEMICON MFG CO LTD
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This will increase the complexity of the process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for making metallized capacitor
  • Method for making metallized capacitor
  • Method for making metallized capacitor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0039] The present invention proposes a method for manufacturing a metal capacitor. First, a semiconductor substrate 100 is provided, and the semiconductor substrate 100 has at least one embedded copper structure, such as Figure 3A As shown, the inlaid copper structure can be a single inlaid copper structure or a double inlaid copper structure. ), but are not shown in detail in the figure to simplify the illustration and subsequent description. In order to facilitate the description of the multi-layer dual damascene copper structure in this embodiment, the X-layer copper structure is used as an example. The number of layers of this copper structure can be several layers to tens of layers or more, and there is no certain limit. The dual damascene copper structure is By a guide hole part V X-1 and an inner connecting part M X Composed of, and the guide hole part V X-1 and inner connection M X It is formed in a composite insulating layer comprising insulating layers 102, 106...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method of making metallic capacitor comprising, providing a semi-conductor substrate with a copper studded arrangement, then forming a sheet metal on the copper studded arrangement, and forming a metallic capacitor on the sheet metal, which includes an electrode layer composed of tantalum nitride layer or titanium nitride, forming an insulation side wall layer on the side wall of the metal capacitor. íí

Description

technical field [0001] The invention relates to a manufacturing method of an integrated circuit, in particular to a manufacturing method of forming a metal capacitor on a semiconductor integrated circuit. Background technique [0002] The traditional manufacturing method of metal capacitors is to form a silicon nitride layer around the capacitor after the patterning is completed, and this kind of metal capacitor structure surrounded by the silicon nitride layer will cause the sidewall electrical breakdown of the metal capacitor earlier due to the collapse of the main body element. [0003] In order to explain the known method of manufacturing a metal capacitor more clearly, it will be described in detail below with reference to the drawings. First, if Figure 1A As shown, a semiconductor substrate 10 is provided. The semiconductor substrate 10 has at least one metal structure 11 formed in a composite insulating layer including an insulating layer 12 and an etch stop layer 1...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/82
Inventor 黄崎峰陈俊宏王是琦林志贤
Owner TAIWAN SEMICON MFG CO LTD