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Method for making metallized capacitor

A technology of metal capacitors and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as increasing the complexity of the manufacturing process, and achieve the effect of preventing easy leakage and good linear capacitance voltage

Inactive Publication Date: 2006-01-18
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This will increase the complexity of the process

Method used

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  • Method for making metallized capacitor
  • Method for making metallized capacitor
  • Method for making metallized capacitor

Examples

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Embodiment

[0036] The present invention proposes a method for manufacturing a metal capacitor. First, a semiconductor substrate 100 is provided, and the semiconductor substrate 100 has at least one embedded copper structure, such as Figure 3A As shown, the inlaid copper structure can be a single inlaid copper structure or a dual inlaid copper structure. ), but are not shown in detail in order to simplify the illustration and subsequent description. For convenience of description, the multi-layer dual damascene copper structure in this embodiment is illustrated by taking an X-layer copper structure. The number of layers of this copper structure can be several to tens of layers or more, and there is no certain limit. The dual damascene copper structure is By a guide hole part V X-1 and an inner connecting part M X Composed of, and the guide hole part V X-1 and inner connection M X It is formed in a composite insulating layer comprising insulating layers 102, 106 and an etch stop layer...

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Abstract

The invention discloses a method of making metallic capacitor comprising, providing a semi-conductor substrate with a copper studded arrangement, then forming a sheet metal on the copper studded arrangement, and forming a metallic capacitor on the sheet metal, which includes an electrode layer composed of tantalum nitride layer or titanium nitride, forming an insulation side wall layer on the side wall of the metal capacitor.

Description

technical field [0001] The invention relates to a manufacturing method of an integrated circuit, in particular to a manufacturing method of forming a metal capacitor on a semiconductor integrated circuit. Background technique [0002] The traditional manufacturing method of metal capacitors is to form a silicon nitride layer around the capacitor after the patterning is completed, and this kind of metal capacitor structure surrounded by the silicon nitride layer will cause the sidewall electrical breakdown of the metal capacitor earlier due to the collapse of the main body element. [0003] In order to explain the known method of manufacturing a metal capacitor more clearly, it will be described in detail below with reference to the drawings. First, if Figure 1A As shown, a semiconductor substrate 10 is provided. The semiconductor substrate 10 has at least one metal structure 11 formed in a composite insulating layer including an insulating layer 12 and an etch stop layer 1...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/82
Inventor 黄崎峰陈俊宏王是琦林志贤
Owner TAIWAN SEMICON MFG CO LTD